Energy Band Engineering by Remote Doping of Self‐Assembled Monolayer Leads to High‐Performance IGZO/ p ‐Si Heterostructure Photodetectors

2021 ◽  
pp. 2107364
Author(s):  
Gunhoo Woo ◽  
Dong Hyun Lee ◽  
Yeri Heo ◽  
Eungchul Kim ◽  
Sungmin On ◽  
...  
Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.


ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6840-6848 ◽  
Author(s):  
Daniel Kälblein ◽  
Hyeyeon Ryu ◽  
Frederik Ante ◽  
Bernhard Fenk ◽  
Kersten Hahn ◽  
...  

2019 ◽  
Vol 7 (8) ◽  
pp. 2232-2239 ◽  
Author(s):  
Congya You ◽  
Guoqing Zhang ◽  
Wenjie Deng ◽  
Chen Zhao ◽  
Boxing An ◽  
...  

A high performance hybrid black phosphorus/PbS QD photodetector with an additional junction through ligand-based energy band engineering.


Author(s):  
Jiankai Zhang ◽  
Huangzhong Yu

The excessive energy loss (Eloss) mainly resulting from the energetic offsets between different layers and defect states-induced charge trapping and recombination limits the further development of perovskite solar cells (PVSCs)....


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