Cascade-type energy band design of a black phosphorus photodetector with high performance

2019 ◽  
Vol 7 (8) ◽  
pp. 2232-2239 ◽  
Author(s):  
Congya You ◽  
Guoqing Zhang ◽  
Wenjie Deng ◽  
Chen Zhao ◽  
Boxing An ◽  
...  
Keyword(s):  
Energy Band ◽  
High Performance ◽  
Black Phosphorus ◽  
Band Engineering ◽  
Cascade Type

A high performance hybrid black phosphorus/PbS QD photodetector with an additional junction through ligand-based energy band engineering.

The energy band engineering for the high-performance infrared photodetectors constructed by CdTe/MoS2 heterojunction

2019 ◽  
Vol 32 (6) ◽  
pp. 065004 ◽  
Author(s):  
Xi-Zi Deng ◽  
Jin-Rong Zhang ◽  
Yu-Qing Zhao ◽  
Zhuo-Liang Yu ◽  
Jun-Liang Yang ◽  
...  
Keyword(s):  
Energy Band ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Band Engineering

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

Synthesis of red/black phosphorus-based composite nanosheets with Z-scheme heterostructure for high-performance cancer phototherapy

Nanoscale ◽  
2021 ◽  
Author(s):  
Yong Kang ◽  
Zhengjun Li ◽  
Fengying Lu ◽  
Zhiguo Su ◽  
Xiaoyuan Ji ◽  
...  
Keyword(s):  
High Performance ◽  
Research Field ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
The Poor ◽  
Low Efficiency ◽  
Poor Stability

Two dimensional black phosphorus nanosheets (BP NS) have attracted plenty of attentions in the research field of cancer photonic therapy. However, the poor stability and relatively low efficiency in reactive...

scholarly journals Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Linxing Meng ◽  
Jinlu He ◽  
Xiaolong Zhou ◽  
Kaimo Deng ◽  
Weiwei Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Energy Band ◽  
High Performance ◽  
Carrier Transport ◽  
Atomic Layer ◽  
Onset Potential ◽  
Layer Deposition ◽  
Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

Solution processed black phosphorus quantum dots for high performance silicon/organic hybrid solar cells

2018 ◽  
Vol 217 ◽  
pp. 92-95 ◽  
Author(s):  
Qingduan Li ◽  
Jianwei Yang ◽  
Chun Huang ◽  
Shaozhong Zeng ◽  
Jizhao Zou ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Performance ◽  
Black Phosphorus ◽  
Hybrid Solar Cells ◽  
Solution Processed ◽  
Organic Hybrid ◽  
Black Phosphorus Quantum Dots

Using energy band engineering to improve heterojunction solar cells efficiency

Optik ◽  
2020 ◽  
Vol 218 ◽  
pp. 165243
Author(s):  
Ali Shokouhi Shoormasti ◽  
Abdollah Abbasi ◽  
Ali Asghar Orouji
Keyword(s):  
Solar Cells ◽  
Energy Band ◽  
Heterojunction Solar Cells ◽  
Band Engineering

Type‐Switchable Inverter and Amplifier Based on High‐Performance Ambipolar Black‐Phosphorus Transistors

2019 ◽  
Vol 5 (6) ◽  
pp. 1900133 ◽  
Author(s):  
Le Zhang ◽  
Li Yang Shao ◽  
Guoqiang Gu ◽  
Taihong Wang ◽  
Xiao Wei Sun ◽  
...  
Keyword(s):  
High Performance ◽  
Black Phosphorus

scholarly journals High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 75 ◽  
Author(s):  
Xiaoling Duan ◽  
Jincheng Zhang ◽  
Jiabo Chen ◽  
Tao Zhang ◽  
Jiaduo Zhu ◽  
...  
Keyword(s):  
Energy Band ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Energy Band Structure ◽  
Drain Region ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Silvaco Atlas ◽  
Channel Region

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10−8 to 1.46 × 10−11 A/μm. In addition, polar InGaN heterostructure TFET having a polarization effect can adjust the energy band structure and achieve steep interband tunneling. The average subthreshold swing of the polar drain engineered heterostructure TFET (DE-HTFET) is reduced by 53.3% compared to that of the nonpolar DE-HTFET. Furthermore, ION increases 100% from 137 mA/mm of nonpolar DE-HTFET to 274 mA/mm of polar DE-HTFET.

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