High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6840-6848 ◽  
Author(s):  
Daniel Kälblein ◽  
Hyeyeon Ryu ◽  
Frederik Ante ◽  
Bernhard Fenk ◽  
Kersten Hahn ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Dielectric ◽  
Zno Nanowire ◽  
Self Assembled Monolayer ◽  
Nanowire Transistors ◽  
Gate Electrodes ◽  
Self Assembled

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Nano Letters ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 5309-5315 ◽  
Author(s):  
Daniel Kälblein ◽  
R. Thomas Weitz ◽  
H. Jens Böttcher ◽  
Frederik Ante ◽  
Ute Zschieschang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Gate Dielectric ◽  
Zno Nanowire ◽  
Self Assembled Monolayer ◽  
Nanowire Transistors ◽  
Self Assembled

scholarly journals High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

2006 ◽  
Vol 89 (26) ◽  
pp. 263102 ◽  
Author(s):  
S. N. Cha ◽  
J. E. Jang ◽  
Y. Choi ◽  
G. A. J. Amaratunga ◽  
G. W. Ho ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Zno Nanowire ◽  
Gate Electrodes ◽  
Effect Transistor

Top-gate ZnO nanowire transistors with ultrathin organic gate dielectric

2009 ◽  
Author(s):  
D. Kalblein ◽  
H. J. Bottcher ◽  
R. T. Weitz ◽  
U. Zschieschang ◽  
K. Kern ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Zno Nanowire ◽  
Nanowire Transistors
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