Phosphonic acid self-assembled monolayer and amorphous hafnium oxide hybrid dielectric for high performance polymer thin film transistors on plastic substrates

2009 ◽  
Vol 95 (11) ◽  
pp. 113305 ◽  
Author(s):  
Orb Acton ◽  
Itaru Osaka ◽  
Guy Ting ◽  
Daniel Hutchins ◽  
Hong Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Phosphonic Acid ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
High Performance ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Plastic Substrates ◽  
High Performance Polymer ◽  
Self Assembled

scholarly journals Self-Assembled Photochromic Molecular Dipoles for High-Performance Polymer Thin-Film Transistors

2018 ◽  
Vol 10 (25) ◽  
pp. 21492-21498 ◽  
Author(s):  
Satyaprasad P. Senanayak ◽  
Vinod K. Sangwan ◽  
Julian J. McMorrow ◽  
Ken Everaerts ◽  
Zhihua Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Polymer Thin Film ◽  
High Performance Polymer ◽  
Self Assembled

scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

Simple Push-coating for High-Performance Polymer Thin-Film Transistors

2012 ◽  
Author(s):  
M. Ikawa ◽  
H. Matsui ◽  
H. Minemawari ◽  
J. Tsutsumi ◽  
T. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Polymer Thin Film ◽  
High Performance Polymer

64-1: Photolithographic Integration of High Performance Polymer Thin-Film Transistors

2016 ◽  
Vol 47 (1) ◽  
pp. 865-868 ◽  
Author(s):  
Stephen Bain ◽  
Pawel Miskiewicz ◽  
Irina Afonina ◽  
Tomas Backlund
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Polymer Thin Film ◽  
High Performance Polymer

Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors

2021 ◽  
Vol 21 (3) ◽  
pp. 1761-1765
Author(s):  
Dae-Cheol Kim ◽  
Young-Geun Ha
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Phosphonic Acid ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
Dielectric Materials ◽  
Root Mean Square Roughness ◽  
Organic Thin Film ◽  
Self Assembled

We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).

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