Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

2021 ◽  
pp. 2104658
Author(s):  
Wenkai Zhu ◽  
Hailong Lin ◽  
Faguang Yan ◽  
Ce Hu ◽  
Ziao Wang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Tunneling Magnetoresistance ◽  
Semiconductor Heterojunctions

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS 2 and GaN

2D Materials ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 045016 ◽  
Author(s):  
Dmitry Ruzmetov ◽  
Mahesh R Neupane ◽  
Andrew Herzing ◽  
Terrance P O’Regan ◽  
Alex Mazzoni ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Semiconductor Heterojunctions

scholarly journals Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

Science ◽  
2018 ◽  
Vol 360 (6394) ◽  
pp. 1214-1218 ◽  
Author(s):  
Tiancheng Song ◽  
Xinghan Cai ◽  
Matisse Wei-Yuan Tu ◽  
Xiaoou Zhang ◽  
Bevin Huang ◽  
...  
Keyword(s):  
Data Storage ◽  
Magnetic Circular Dichroism ◽  
Van Der Waals ◽  
Information Storage ◽  
Tunneling Magnetoresistance ◽  
Tunnel Barrier ◽  
Layer By Layer ◽  
Magnetic Multilayer ◽  
Spin Filter ◽  
Antiferromagnetic Ordering

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Spin-Constraint Optoelectronic Functionality in Two-Dimensional Ferromagnetic Semiconductor Heterojunctions

2021 ◽  
Author(s):  
Yilv Guo ◽  
Yehui Zhang ◽  
Zhaobo Zhou ◽  
Xiwen Zhang ◽  
Bing Wang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Devices ◽  
New Physics ◽  
Ferromagnetic Semiconductor ◽  
Two Dimensional ◽  
Potential Applications ◽  
New Type ◽  
Semiconductor Heterojunctions

Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary new physics and potential applications. Herein, we propose a new type of spin-constraint optoelectronic devices, implemented in 2D...

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

2020 ◽  
Vol 22 (26) ◽  
pp. 14773-14780 ◽  
Author(s):  
Zhi Yan ◽  
Ruiqiang Zhang ◽  
Xinlong Dong ◽  
Shifei Qi ◽  
Xiaohong Xu
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
Tunneling Magnetoresistance ◽  
Positive Bias ◽  
Filtering Effect ◽  
Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

Growth of multiple WS2/SnS layered semiconductor heterojunctions

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2143-2148 ◽  
Author(s):  
Robert Browning ◽  
Paul Plachinda ◽  
Prasanna Padigi ◽  
Raj Solanki ◽  
Sergei Rouvimov
Keyword(s):  
Crystal Structures ◽  
Van Der Waals ◽  
Layered Semiconductor ◽  
Semiconductor Heterojunctions

Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures.

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