Spin-Constraint Optoelectronic Functionality in Two-Dimensional Ferromagnetic Semiconductor Heterojunctions

2021 ◽  
Author(s):  
Yilv Guo ◽  
Yehui Zhang ◽  
Zhaobo Zhou ◽  
Xiwen Zhang ◽  
Bing Wang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Devices ◽  
New Physics ◽  
Ferromagnetic Semiconductor ◽  
Two Dimensional ◽  
Potential Applications ◽  
New Type ◽  
Semiconductor Heterojunctions

Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary new physics and potential applications. Herein, we propose a new type of spin-constraint optoelectronic devices, implemented in 2D...

Two-dimensional layered Janus-In2SeTe/C2N van der Waals heterostructures for photocatalysis and photovoltaics: first-principles calculations

2020 ◽  
Vol 44 (37) ◽  
pp. 16092-16100
Author(s):  
Xiao-Hua Li ◽  
Bao-Ji Wang ◽  
Hui Li ◽  
Xue-Feng Yang ◽  
Rui-Qi Zhao ◽  
...  
Keyword(s):  
Dft Calculations ◽  
First Principles ◽  
Sustainable Energy ◽  
Van Der Waals ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Through DFT calculations, Janus-In2SeTe/C2N heterostructures are found to have great potential applications in the fields of clean and sustainable energy.

scholarly journals Emerging Artificial Two-Dimensional van der Waals Heterostructures for Optoelectronics

2020 ◽  
Author(s):  
Hongcheng Ruan ◽  
Yu Huang ◽  
Yuqian Chen ◽  
Fuwei Zhuge
Keyword(s):  
Material Properties ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Vertical Direction ◽  
Two Dimensional ◽  
Device Application ◽  
Optical Memories ◽  
Optoelectronic Applications ◽  
Transfer Method

Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Waals (VdW) stacking in artificial sequence, thus forming different atomic arrangements in vertical direction and enabling unprecedented tailoring of material properties and device application. In this chapter, we summarize the latest progress in assembling VdW heterostructures for optoelectronic applications by beginning with the basic pick-transfer method for assembling 2D materials and then discussing the different combination of 2D materials of semiconductor, conductor, and insulator properties for various optoelectronic devices, e.g., photodiode, phototransistors, optical memories, etc.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

Two-Dimensional Organization of Single Crystal ZnO Nanopillars

2006 ◽  
Vol 957 ◽  
Author(s):  
Jingbiao Cui ◽  
Ursula J Gibson
Keyword(s):  
Periodic Structures ◽  
Optoelectronic Devices ◽  
Electrochemical Process ◽  
Two Dimensional ◽  
Photonic Materials ◽  
Potential Applications ◽  
Nanopillar Arrays ◽  
Template Material ◽  
Microfabrication Techniques ◽  
Soft Templates

ABSTRACTPeriodically ordered ZnO nanopillar arrays were fabricated by a combination of soft templates created by e-beam lithography and an electrochemical process. Growth at 90 °C in an aqueous solution ensured compatibility with the polymethyl methacrylate used as a template material. We demonstrate that individual ZnO nanopillars with diameters around 100 nm can be precisely placed in desired locations to form two-dimensional periodic structures. This approach provides a new method for design and fabrication of ZnO photonic materials. The process is compatible with standard microfabrication techniques and may have potential applications in the manufacture of photonic and optoelectronic devices.

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Insight Into

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.

Two-dimensional van der Waals heterojunctions for functional materials and devices

2017 ◽  
Vol 5 (47) ◽  
pp. 12289-12297 ◽  
Author(s):  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electronic Structures ◽  
2D Materials ◽  
Van Der Waals ◽  
Functional Materials ◽  
Two Dimensional ◽  
Potential Applications

Two-dimensional (2D) van der Waals heterojunctions combining the electronic structures of such 2D materials have been predicted theoretically and synthesized experimentally to expect more new properties and potential applications far beyond corresponding 2D materials.

scholarly journals The Creation of True Two-Dimensional Silicon Carbide

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1799
Author(s):  
Sakineh Chabi ◽  
Zeynel Guler ◽  
Adrian J. Brearley ◽  
Angelica D. Benavidez ◽  
Ting Shan Luk
Keyword(s):  
Silicon Carbide ◽  
Light Emission ◽  
Van Der Waals ◽  
Longitudinal Optical ◽  
Synthesis Process ◽  
Two Dimensional ◽  
Light Emitting Devices ◽  
Energy Applications ◽  
Successful Isolation ◽  
Potential Applications

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.

scholarly journals Strain engineering on the electronic states of two-dimensional GaN/graphene heterostructure

RSC Advances ◽  
2019 ◽  
Vol 9 (45) ◽  
pp. 26024-26029 ◽  
Author(s):  
Zhongxun Deng ◽  
Xianhui Wang
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Electronic States ◽  
Layered Structures ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Vdw Heterostructure

Combining two different layered structures to form a van der Waals (vdW) heterostructure has recently emerged as an intriguing way of designing electronic and optoelectronic devices.

scholarly journals Noncollinear topological textures in two-dimensional van der Waals materials: From magnetic to polar systems

2021 ◽  
pp. 2130004
Author(s):  
Xiaoyan Yao ◽  
Yu Wang ◽  
Shuai Dong
Keyword(s):  
Electric Dipole ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Potential Applications ◽  
Van Der Waals Materials ◽  
Magnetic Skyrmions

In recent years, noncollinear topological textures have long gained increasing research attentions for their high values of both fundamental researches and potential applications. The recent discovery of intrinsic orders in magnetic and polar two-dimensional (2D) van der Waals materials provides a new ideal platform for the investigation of noncollinear topological textures. Here, we review the theoretical and experimental progresses on noncollinear topological textures in 2D van der Waals materials in very recent years. During these years, magnetic skyrmions of both Bloch and Néel types have been observed experimentally in a few 2D van der Waals materials and related heterostructures. Concurrently, more theoretic predictions basing on various mechanisms have been reported about different noncollinear topological textures in 2D van der Waals materials, such as skyrmions, bimerons, anti-biskyrmions and skyrmionium, which are still waiting to be confirmed in experiments. Besides, noncollinear topological electric dipole orders have also been predicted in 2D van der Waals materials. Taking advantage of the intrinsic 2D nature and high integratability, the 2D van der Waals materials will play an important role in the investigation on noncollinear topological textures in both magnetic and polar systems.

scholarly journals Valleytronics in Two-dimensional Materials

2020 ◽  
Vol 29 (6) ◽  
pp. 28-32
Author(s):  
Hyejin RYU
Keyword(s):  
Data Storage ◽  
Degrees Of Freedom ◽  
Degree Of Freedom ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Additional Control ◽  
Two Dimensional Materials ◽  
Potential Applications ◽  
New Type ◽  
Efficient Information

A new type of degree of freedom in terms of valley symmetry has recently emerged, allowing an additional control, in addition to the traditional controls of the charge and the spin degrees of freedom, which are widely used in transistors and in spintronic devices, respectively. Valleytronics is a new type of electronics having great potential for faster and more efficient information processing and for high-density data storage in next-generation devices. Two-dimensional materials are considered to be ideal systems for investigating valleytronics due to many systems having two distinguishable valleys of opposite spin textures. In this article, we demonstrate the fundamental properties related to the valley degree of freedom in two-dimensional materials and its potential applications for valleytronic devices.

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