Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature

2014 ◽  
Vol 116 (22) ◽  
pp. 223701 ◽  
Keyword(s):  
Room Temperature ◽  
Low Voltage ◽  
Tunneling Magnetoresistance ◽  
Semiconductor Heterojunctions

Low Voltage Nonlinear Conductance of Gold Nanowires: Room Temperature Coulomb Blockade Effect?

1998 ◽  
pp. 1-10 ◽  
Author(s):  
J. L. Costa-Krämer ◽  
N. Garcia ◽  
M. Jonson ◽  
I. V. Krive ◽  
H. Olin ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Low Voltage ◽  
Gold Nanowires ◽  
Nonlinear Conductance

Tunneling Magnetoresistance above Room Temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3Junctions

2003 ◽  
Vol 42 (Part 2, No. 4A) ◽  
pp. L369-L372 ◽  
Author(s):  
Yasushi Ogimoto ◽  
Makoto Izumi ◽  
Akihito Sawa ◽  
Takashi Manako ◽  
Hiroshi Sato ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunneling Magnetoresistance

The Effect of Electropolishing Time Variation at Room Temperature and Low Voltage on the Surface Quality of Cardiovascular Stent

2019 ◽  
Vol 1154 ◽  
pp. 91-101
Author(s):  
Eko Pujiyulianto ◽  
Suyitno
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Low Voltage ◽  
Surface Characteristics ◽  
Recast Layer ◽  
Average Surface Roughness ◽  
Average Surface ◽  
Cardiovascular Stent ◽  
Weight Analysis ◽  
The Times

Electropolishing is an attractive method for surface smoothing of cardiovascular stent. This study investigated the effect of times of electropolishing on the surface characteristics both are upper surface and surface of the strut of cardiovascular stent after the by die sinking electrical discharge machining (EDM). The observed surface characteristics of the strut were recast layer, surface roughness and brightness. The weight analysis, and the reduction of the width strut were conducted. The recast layer was analyzed by optical microscope qualitatively, the surface roughness was measured by surface texture measuring instrument, the weight analysis and the reduction of width strut were calculated. The stent was made from steel AISI 316 L. The times which were used in the electropolishing were 3 minutes, 7 minutes, and 11 minutes. The experimental results show that the time for smoothing and brightening of stent at room temperature and low voltage 5 V is 7 minutes. The times affect the upper and EDM surface roughness, the weight of stent and the width of strut. The results show that increasing of times, than the value of surface roughness, the weight of stent and the width of strut will decrease, and vice versa. The average surface roughness of EDM surface after electropolishing is in the range of 3.49 – 1.62 µm. The average surface roughness of upper surface after electropolishing is in the range of 0.55-0.22 µm. The weight analysis show that the loss of weight is in the range of 0.12-1.12 %, and the reduction of width strut is in the range of 11.02 – 69.3 %.

Electroluminescence of Hybrid Self-Organised Fibres Incorporating CdTe Quantum Dots

2012 ◽  
Vol 65 (9) ◽  
pp. 1257 ◽  
Author(s):  
Masanori Ando ◽  
Chie Hosokawa ◽  
Ping Yang ◽  
Norio Murase
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Room Temperature ◽  
Low Voltage ◽  
The Self ◽  
Cdte Quantum Dots ◽  
Electroluminescent Devices ◽  
Interdigitated Array Electrodes ◽  
Low Threshold ◽  
Interdigitated Array

We demonstrated electroluminescence from hybrid 1D glass fibres incorporating CdTe quantum dots with a thin SiO2 overlayer which contains CdS-like clusters. The self-organised fibres, prepared by refluxing precursor nanowires, exhibited red electroluminescence on Au interdigitated array electrodes at room temperature. Although fluctuation with time was observed in the electroluminescence, relatively low threshold electric field (2.6 × 106 V m–1) suggests that the CdTe quantum dots-based hybrid fibres are expected to be applied to low voltage driven electroluminescent devices.

Nitride Phosphors for Low Voltage Cathodoluminescence Devices

2000 ◽  
Vol 621 ◽  
Author(s):  
Hisashi Kanie ◽  
Takahiro Kawano ◽  
Kose Sugimoto ◽  
Ryoji Kawai
Keyword(s):  
Room Temperature ◽  
Anode Voltage ◽  
Low Voltage ◽  
Fundamental Absorption Edge ◽  
Low Energy ◽  
Photoluminescence Excitation ◽  
Body Color ◽  
Step Method ◽  
Luminance Efficiency ◽  
Blue Photoluminescence

ABSTRACTUndoped and Zn doped InGaN microcrystals were synthesized by a two-step method. The InGaN microcrystals have a wurtzite structure and brownish body color. The InGaN samples prepared at 900°C did not contain a metal In phase. The InGaN:Zn microcrystals showed blue photoluminescence (PL) at 77K different from that of GaN:Zn. Reflectivity and photoluminescence excitation (PLE) measurement showed that the fundamental absorption edge of the InGaN:Zn phosphors is 3.47 eV, which implies that the In content in the InGaN:Zn phosphors is less than 0.2%. GaN:Zn and InGaN:Zn showed a Zn related PLE peak at 3.34 eV. InGaN and InGaN:Zn showed an In related PLE peak at 3.14 eV. When the InGaN:Zn samples were selectively excited at 3.15 eV, an In-related emission band centered at 2.2 eV emerged. The InGaN:Zn phosphors mounted on vacuum fluorescent displays (VFDs) showed room-temperature blue cathodoluminescence (CL) and the CL peak shifted slightly toward the low energy compared to that of the GaN:Zn phosphors because of the superimposed In related band. The InGaN:Zn phosphors had a luminance of 50 cd/m2 and a luminance efficiency of 0.03 lm/W at an anode voltage of 50 V.

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