Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

2020 ◽  
Vol 22 (26) ◽  
pp. 14773-14780 ◽  
Author(s):  
Zhi Yan ◽  
Ruiqiang Zhang ◽  
Xinlong Dong ◽  
Shifei Qi ◽  
Xiaohong Xu
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
Tunneling Magnetoresistance ◽  
Positive Bias ◽  
Filtering Effect ◽  
Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

scholarly journals Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF
Keyword(s):  
Current Density ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Electron Current ◽  
Ferromagnetic Electrode ◽  
Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Barrier Thickness ◽  
Tunneling Barrier

scholarly journals Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe3GeTe2 Electrodes

Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 5133-5139 ◽  
Author(s):  
Xinlu Li ◽  
Jing-Tao Lü ◽  
Jia Zhang ◽  
Long You ◽  
Yurong Su ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport
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