Orientational Transition of Liquid Crystal Molecules by a Photoinduced Transformation Process into a Recovery-free Silicon Oxide Layer

2008 ◽  
Vol 20 (16) ◽  
pp. 3073-3078 ◽  
Author(s):  
Jong Bok Kim ◽  
Chu Ji Choi ◽  
Jin Seol Park ◽  
Sung Jin Jo ◽  
Byoung Har Hwang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Transformation Process ◽  
Silicon Oxide Layer ◽  
Orientational Transition ◽  
Free Silicon ◽  
Photoinduced Transformation

Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

2013 ◽  
Vol 15 (4) ◽  
Author(s):  
A. En Naciri ◽  
P. Miska ◽  
A.-S. Keita ◽  
Y. Battie ◽  
H. Rinnert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Silicon Oxide Layer

Origin of Mosaic Structure Obtained During the Production of Porous Silicon with Electrochemical Etching

2019 ◽  
Vol 11 (12) ◽  
pp. 1218-1224
Author(s):  
Dao Tran Cao ◽  
Cao Tuan Anh ◽  
Luong Truc Quynh Ngan
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Current Density ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Mosaic Structure ◽  
Anodic Current Density ◽  
Anodic Current ◽  
Silicon Oxide Layer

So far, while producing porous silicon (PSi) with anodic etching of silicon in an aqueous solution of hydrofluoric acid, many researchers (including us) have obtained the crack-into-pieces (or mosaic) structure. Most of the authors believed that the cause of this structure is the collapse and the cracking of the porous, especially highly porous, silicon layer which took place during the drying of PSi after fabrication. However, our study showed that the mosaic structure was formed right during the course of silicon anodization at high anodic current density. Furthermore, our study also showed that at high anodic current density the real silicon etching has been replaced by the growth of a silicon oxide layer. This is a layer of another substance that grows on silicon, so when the layer is too thick (which is obtained when the anodic current density is too high and/or the anodization time is too long) it will crack, creating mosaic pieces. When the silicon oxide layer is cracked, the locations around the cracks will be etched more violently than elsewhere, creating trenches. Thus, the mosaic structure with mosaic pieces emerged between the trenches has formed.

Surface Stress in the Growth of Silicon Oxide Layer.

Shinku ◽  
1999 ◽  
Vol 42 (10) ◽  
pp. 929-932
Author(s):  
Akiko N. ITAKURA ◽  
Tetsuya NARUSHIMA ◽  
Takayuki KURASHINA ◽  
Masahiro KITAJIMA ◽  
Kazuo TERAISHI ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Surface Stress ◽  
Silicon Oxide ◽  
Silicon Oxide Layer
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