2005 International Conference On Simulation of Semiconductor Processes and Devices
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

4990276205

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmInClusters in Pre-doped Silicon

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201475 ◽

2005 ◽

Author(s):

Jae-Hyun Yoo ◽

Taeyoung Won ◽

Chi-Ok Hwang ◽

Byeong-Jun Kim

Keyword(s):

Atomistic Modeling ◽

Boron Diffusion ◽

Doped Silicon

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Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201464 ◽

2005 ◽

Cited By ~ 8

Author(s):

A.R. Brown ◽

J.R. Watling ◽

A. Asenov ◽

G. Bersuker ◽

P. Zeitzoff

Keyword(s):

Intrinsic Parameter ◽

Gate Stack ◽

Intrinsic Parameter Fluctuations

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Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201532 ◽

2005 ◽

Author(s):

A. Kumar ◽

M.V. Fischetti ◽

S.E. Laux

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Strained Si ◽

Performance Scaling

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2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201454 ◽

2005 ◽

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Three-Dimensional Simulation of Stress Dependent Thermal Oxidation

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201503 ◽

2005 ◽

Author(s):

Ch. Hollauer ◽

H. Ceric ◽

S. Selberherr

Keyword(s):

Thermal Oxidation ◽

Three Dimensional ◽

Dimensional Simulation ◽

Stress Dependent

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Phenomenological model for "stress memorization" effect from a capped-poly process

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201492 ◽

2005 ◽

Cited By ~ 4

Author(s):

L.S. Adam ◽

C. Chiu ◽

M. Huang ◽

X. Wang ◽

Y. Wang ◽

...

Keyword(s):

Phenomenological Model

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Three Dimensional CMOS Image Sensor Cell Simulation and Optimization

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201483 ◽

2005 ◽

Author(s):

Kee-Hyun Paik ◽

Seok-Ha Lee ◽

Jeong-Ho Lyu ◽

Keun-Ho Lee ◽

Young-Kwan Park ◽

...

Keyword(s):

Three Dimensional ◽

Cmos Image Sensor ◽

Image Sensor ◽

Simulation And Optimization ◽

Sensor Cell ◽

Cell Simulation

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Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201516 ◽

2005 ◽

Cited By ~ 3

Author(s):

P. Schwaha ◽

R. Heinzl ◽

T. Grasser ◽

M. Spevak

Keyword(s):

Three Dimensional ◽

Posteriori Error ◽

Mesh Adaptation ◽

Error Estimator ◽

A Posteriori ◽

A Posteriori Error Estimator ◽

Posteriori Error Estimator ◽

A Posteriori Error

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Author index

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201542 ◽

2005 ◽

Download Full-text

A Highly Efficient Statistical Compact Model Parameter Extraction Scheme

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201491 ◽

2005 ◽

Cited By ~ 2

Author(s):

K. Takeuchi ◽

M. Hane

Keyword(s):

Parameter Extraction ◽

Compact Model ◽

Model Parameter ◽

Highly Efficient ◽

Extraction Scheme

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2005 International Conference On Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmInClusters in Pre-doped Silicon

Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs

Copyright page

Three-Dimensional Simulation of Stress Dependent Thermal Oxidation

Phenomenological model for "stress memorization" effect from a capped-poly process

Three Dimensional CMOS Image Sensor Cell Simulation and Optimization

Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator

Author index

A Highly Efficient Statistical Compact Model Parameter Extraction Scheme

2005 International Conference On Simulation of Semiconductor Processes and Devices
Latest Publications