Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmInClusters in Pre-doped Silicon

2005 ◽  
Author(s):  
Jae-Hyun Yoo ◽  
Taeyoung Won ◽  
Chi-Ok Hwang ◽  
Byeong-Jun Kim
Keyword(s):  
Atomistic Modeling ◽  
Boron Diffusion ◽  
Doped Silicon

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures

2003 ◽  
Vol 434 (1-2) ◽  
pp. 152-156 ◽  
Author(s):  
Farida Mansour ◽  
Ramdane Mahamdi ◽  
Laurent Jalabert ◽  
Pierre Temple-Boyer
Keyword(s):  
Silicon Films ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Polysilicon Gate ◽  
Doped Silicon

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5R) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

Simple atomistic modeling of dominant BmInclusters in boron diffusion

2005 ◽  
Vol 31 (12) ◽  
pp. 817-824 ◽  
Author(s):  
J.-H. Yoo ◽  
C.-O. Hwang ◽  
B.-J. Kim ◽  
T. Won
Keyword(s):  
Atomistic Modeling ◽  
Boron Diffusion

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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