2006 7th Annual Non-Volatile Memory Technology Symposium
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Published By IEEE

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Reliability of three-dimensional ferroelectric capacitor memory-like arrays simultaneously submitted to x-rays and electrical stresses

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378873 ◽

2006 ◽

Cited By ~ 4

Author(s):

Ch. Muller ◽

L. Courtade ◽

Ch. Turquat ◽

L. Goux ◽

D.J. Wouters

Keyword(s):

Three Dimensional ◽

X Rays ◽

Ferroelectric Capacitor

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On the Existence of Two Different Resistive Switching Mechanisms in Metal Organic Charge Transfer Complex Thin Films

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378889 ◽

2006 ◽

Cited By ~ 1

Author(s):

Thorsten Kever ◽

Bart Klopstra ◽

Ulrich Bottger ◽

Rainer Waser

Keyword(s):

Thin Films ◽

Charge Transfer ◽

Resistive Switching ◽

Charge Transfer Complex ◽

Metal Organic

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A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378887 ◽

2006 ◽

Cited By ~ 10

Author(s):

Muralikrishnan Balakrishnan ◽

Sarath Chandran Puthen Thermadam ◽

Maria Mitkova ◽

Michael N. Kozicki

Keyword(s):

Low Power ◽

Silicon Oxide ◽

Memory Element ◽

Non Volatile Memory ◽

Volatile Memory

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2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378863 ◽

2006 ◽

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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378875 ◽

2006 ◽

Cited By ~ 4

Author(s):

K.-T. Nam ◽

S. C. Oh ◽

J. E. Lee ◽

J. H. Jeong ◽

I. G. Baek ◽

...

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Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378882 ◽

2006 ◽

Cited By ~ 1

Author(s):

Shin Kikuchi ◽

Dong Young Oh ◽

Isao Kimura ◽

Yutaka Nishioka ◽

Masahisa Ueda ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Rf Magnetron Sputtering ◽

Access Memory ◽

Nitrogen Doped

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Resistance Switching Memory Effect in Transition Metal Oxide Thin Films

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378886 ◽

2006 ◽

Cited By ~ 3

Author(s):

A. Ignatiev ◽

N. J. Wu ◽

S. Q. Liu ◽

X. Chen ◽

Y. B. Nian ◽

...

Keyword(s):

Thin Films ◽

Transition Metal ◽

Metal Oxide ◽

Memory Effect ◽

Transition Metal Oxide ◽

Resistance Switching ◽

Oxide Thin Films ◽

Metal Oxide Thin Films ◽

Switching Memory

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Integrated Analysis and Design of Phase-Change Random Access Memory (PCRAM) Cells

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378880 ◽

2006 ◽

Cited By ~ 3

Author(s):

J.M. Li ◽

L. P. Shi ◽

H.X. Yang ◽

K. G. Lim ◽

X. S. Miao ◽

...

Keyword(s):

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Integrated Analysis ◽

Access Memory ◽

Analysis And Design

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A 4-Mbit Non-Volatile Chalcogenide-Random Access Memory Designed for Space Applications

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378879 ◽

2006 ◽

Cited By ~ 4

Author(s):

Bin Li ◽

Adam Bumgarner ◽

Daniel Pirkl ◽

James Stobie ◽

Wayne Neiderer ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Space Applications

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Electrodeposit Formation in Solid Electrolytes

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378888 ◽

2006 ◽

Cited By ~ 8

Author(s):

Michael N. Kozicki ◽

Cynthia Ratnakumar ◽

Maria Mitkova

Keyword(s):

Solid Electrolytes

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2006 7th Annual Non-Volatile Memory Technology SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability of three-dimensional ferroelectric capacitor memory-like arrays simultaneously submitted to x-rays and electrical stresses

On the Existence of Two Different Resistive Switching Mechanisms in Metal Organic Charge Transfer Complex Thin Films

A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide

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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering

Resistance Switching Memory Effect in Transition Metal Oxide Thin Films

Integrated Analysis and Design of Phase-Change Random Access Memory (PCRAM) Cells

A 4-Mbit Non-Volatile Chalcogenide-Random Access Memory Designed for Space Applications

Electrodeposit Formation in Solid Electrolytes

2006 7th Annual Non-Volatile Memory Technology Symposium
Latest Publications