On the Existence of Two Different Resistive Switching Mechanisms in Metal Organic Charge Transfer Complex Thin Films

Author(s):  
Thorsten Kever ◽  
Bart Klopstra ◽  
Ulrich Bottger ◽  
Rainer Waser
2020 ◽  
Vol 2 (11) ◽  
pp. 5171-5180
Author(s):  
Tyler H. Bennett ◽  
Ravi Pamu ◽  
Guang Yang ◽  
Dibyendu Mukherjee ◽  
Bamin Khomami

The photosynthetic protein complex Photosystem I has been incorporated into the metal organic framework ZIF-8 and then reacted with TCNQ to form a conductive charge transfer salt, generating significant photocurrent from a biohybrid photoactive film.


2016 ◽  
Vol 4 (47) ◽  
pp. 11173-11179 ◽  
Author(s):  
Faegheh Hoshyargar ◽  
Mahnaz Shafiei ◽  
Carlo Piloto ◽  
Nunzio Motta ◽  
Anthony P. O'Mullane

The ability to detect and monitor toxic and greenhouse gases is highly important, however to achieve this at room temperature and allow for remote sensing applications is a significant challenge.


ChemPlusChem ◽  
2016 ◽  
Vol 81 (4) ◽  
pp. 378-383 ◽  
Author(s):  
Faegheh Hoshyargar ◽  
Manika Mahajan ◽  
Anuradha ◽  
Sheshanath V. Bhosale ◽  
Louis Kyratzis ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aykut Baki ◽  
Julian Stöver ◽  
Tobias Schulz ◽  
Toni Markurt ◽  
Houari Amari ◽  
...  

AbstractHomoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛr = 202 and a larger vertical lattice parameter. Current–voltage characteristics (IVCs) of metal–oxide–semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on–off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.


2002 ◽  
Vol 26 (7) ◽  
pp. 915-919 ◽  
Author(s):  
Hélène Casellas ◽  
Dominique de Caro ◽  
Lydie Valade ◽  
Jordi Fraxedas

Sign in / Sign up

Export Citation Format

Share Document