Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

2018 ◽  
Vol 112 (25) ◽  
pp. 252104 ◽  
Author(s):  
Takuya Maeda ◽  
Tetsuo Narita ◽  
Masakazu Kanechika ◽  
Tsutomu Uesugi ◽  
Tetsu Kachi ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Junction Diode ◽  
Franz Keldysh Effect ◽  
High Reverse Bias

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

2016 ◽  
Vol 9 (9) ◽  
pp. 091002 ◽  
Author(s):  
Takuya Maeda ◽  
Masaya Okada ◽  
Masaki Ueno ◽  
Yoshiyuki Yamamoto ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Reverse Bias Voltage ◽  
Franz Keldysh Effect ◽  
High Reverse Bias

Erratum: “Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”

2016 ◽  
Vol 9 (10) ◽  
pp. 109201 ◽  
Author(s):  
Takuya Maeda ◽  
Masaya Okada ◽  
Masaki Ueno ◽  
Yoshiyuki Yamamoto ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Reverse Bias Voltage ◽  
Franz Keldysh Effect ◽  
High Reverse Bias

scholarly journals Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

2006 ◽  
Vol 3 (16) ◽  
pp. 379-384 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Shuntaro Matsuzaki ◽  
Tsunenobu Kimoto ◽  
Takashi Hikihara
Keyword(s):  
Bias Voltage ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Voltage Measurement ◽  
Capacitance Voltage ◽  
High Reverse Bias

scholarly journals Квантовый выход кремниевого лавинного фотодиода в диапазоне длин волн 120-170 nm

2020 ◽  
Vol 90 (8) ◽  
pp. 1386
Author(s):  
П.Н. Аруев ◽  
В.П. Белик ◽  
В.В. Забродский ◽  
Е.М. Круглов ◽  
А.В. Николаев ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Wavelength Range ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Avalanche Photodiode ◽  
Reverse Bias Voltage ◽  
External Quantum Yield

The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.

Optical detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diode

2021 ◽  
Author(s):  
Muhammad Hafiz bin Abu Bakar ◽  
Aboulaye Traore ◽  
Junjie Guo ◽  
Toshiharu MAKINO ◽  
Masahiko Ogura ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Bias Voltage ◽  
Schottky Diode ◽  
Stark Effect ◽  
Reverse Bias ◽  
Nitrogen Vacancy ◽  
Reverse Bias Voltage ◽  
Zero Phonon Line ◽  
Optically Detected ◽  
Nv Centers

Abstract Diamond solid-state devices are very attractive to electrically control the charge state of Nitrogen-Vacancy (NV) centers. In this work, Vertical p-type Diamond Schottky Diode (VDSDs) is introduced as a platform to electrically control the interconversion between the neutral charge NV (NV0) and negatively charged NV (NV-) centers. The photoluminescence (PL) of NV centers generated by ion-implantation in VDSDs shows the increase of NV- Zero Phonon Line (ZPL) and phonon sideband (PBS) intensities with the reverse voltage, whereas the NV0 ZPL intensity decreases. Thus, NV centers embedded into VDSDs are converted into NV- under reverse bias voltage. Moreover, the optically detected magnetic resonance (ODMR) of NV- exhibits an increase in the ODMR contrast with the reverse bias voltage and splitting of the resonance dips. Since no magnetic is applied, such a dip splitting in ODMR spectrum is ascribed the Stark effect induced by the interaction of NV- with the electric field existing within the depletion region of VDSDs.

Photoresponse Linearity of a-Si:H Imaging Pixels

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Yorkston ◽  
L.E. Antonuk ◽  
W. Huang ◽  
R.A. Street
Keyword(s):  
Amorphous Silicon ◽  
Bias Voltage ◽  
Linear Response ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Imaging Arrays ◽  
Low Contrast ◽  
X Ray

Amorphous silicon imaging arrays with ∼3×105 pixels have recently been developed and x-ray images of low contrast anatomical phantoms have been demonstrated. This paper reports on the linearity of response of these a-Si:H imaging pixels as a function of reverse bias voltage. The fraction of the imaging pixel's full signal range that maintains a linear response has been found to increase with increasing voltage.

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