GE SiC Semiconductor Device Operation at Extreme Temperatures

GE Research has been working on the design, packaging, and testing of SiC Power semiconductors devices at junction temperatures up to 500°C for the past 5 years. Intrinsically, SiC power devices are able to endure and operate reliably at harsh environments. Limiting factors to packaged devices’ operation at high temperature are the contact metallization and packaging. While testing bare die power devices, probe contact resistance was found to be an issue for resistance measurements at very high temperatures. On the backside contact, traditional die attach solders have operational temperature limits. Using insulated metal substrates, sintered die attach, and wedge bond interconnect, GE Research tested its power devices up to 500°C junction temperature. GE Research also demonstrated various junction termination dielectric stackups which can block up to 1000V at 500°C junction and show improvements over traditional organic dielectric options (e.g. Epoxy, Silicone, Polyimide).

All-organic dielectric polymer films exhibiting superior electric breakdown strength and discharged energy density by adjusting the electrode–dielectric interface with an organic nano-interlayer

The surface morphology of dielectric films has a great effect on the insulation performance. Remarkably improved capacitive performance is realized by adjusting the electrode–dielectric interface.

Organic Dielectric Films for Flexible Transistors as Gas Sensors

Cross-linked polymer films with poly(melamine-co-formaldehyde) methylated (PMF) were investigated in order to integrate flexible organic transistor-based sensors. By blending poly(methyl methacrylate) (PMMA) with PMF, solutions showed reduced viscosity for wet processing. Thin-films from poly (4-vinylphenol) (PVP) blends with PMF featured lower RMS roughness (0.37 nm) and higher dielectric constant (k ~ 3.7 – 5.7). The presence of enhanced cross-linking at higher PMF concentrations was confirmed for both polymers from chemical resistance essays and structural characterization.

Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy

We introduce a horizontal array capacitor with nine capacitances in a single body using an organic dielectric layer impregnated with glass fiber as a prepreg sheet. An organic solid horizontal array capacitor with a dielectric of prepreg materials of the epoxy type can implement the nine capacitances in a single body via a unique simple lamination and cutting process. We then investigate the basic electrical properties of a horizontal array capacitor. The organic solid array capacitors with five electrodes and four dielectrics are Cu/PPG layer/Cu/PPG layer/Cu/PPG layer/Cu/PPG layer/Cu with a horizontal array structure. The size of a completed array capacitor is 2.85 × 2.85 mm. The height of the fabricated array capacitor in the vertical direction is 0.5 mm, with nine capacitances possessing a series-type structure. The average capacitance value of C1, C2, C3, and C4 is 1.98 nF, and each tolerance has a value within 1% based on the average value. The temperature change rate in the capacitance maintains a nearly linear characteristic, but the rate of change tends to increase finely from 120°C or more. The capacitance values of C5, C6, and C7 with the parallel circuit were measured according to the voltage. Impedance and ESR (equivalent series resistor) of C1 were measured according to frequency and temperature.