High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 15646-15653
Author(s):  
Hyung Gon Shin ◽  
Donghee Kang ◽  
Yeonsu Jeong ◽  
Kitae Kim ◽  
Yongjae Cho ◽  
...  
2018 ◽  
Vol 30 (2) ◽  
pp. 025201 ◽  
Author(s):  
Jean Choukroun ◽  
Marco Pala ◽  
Shiang Fang ◽  
Efthimios Kaxiras ◽  
Philippe Dollfus

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.


ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10123-10129 ◽  
Author(s):  
Hisashi Ichimiya ◽  
Masahiro Takinoue ◽  
Akito Fukui ◽  
Kohei Miura ◽  
Takeshi Yoshimura ◽  
...  

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