Wavelength conversion through plasmon-coupled surface states

Surface states generally degrade semiconductor device performance by raising the charge injection barrier height, introducing localized trap states, inducing surface leakage current, and altering the electric potential. We show that the giant built-in electric field created by the surface states can be harnessed to enable passive wavelength conversion without utilizing any nonlinear optical phenomena. Photo-excited surface plasmons are coupled to the surface states to generate an electron gas, which is routed to a nanoantenna array through the giant electric field created by the surface states. The induced current on the nanoantennas, which contains mixing product of different optical frequency components, generates radiation at the beat frequencies of the incident photons. We utilize the functionalities of plasmon-coupled surface states to demonstrate passive wavelength conversion of nanojoule optical pulses at a 1550 nm center wavelength to terahertz regime with efficiencies that exceed nonlinear optical methods by 4-orders of magnitude.

Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface

Quasi-two-dimensional perovskites have emerged as a new material platform for optoelectronics on account of its intrinsic stability. A major bottleneck to device performance is the high charge injection barrier caused by organic molecular layers on its basal plane, thus the best performing device currently relies on edge contact. Herein, by leveraging on van der Waals coupling and energy level matching between two-dimensional Ruddlesden-Popper perovskite and graphene, we show that the plane-contacted perovskite and graphene interface presents a lower barrier than gold for charge injection. Electron tunneling across the interface occurs via a gate-tunable, direct tunneling-to-field emission mechanism with increasing bias, and photoinduced charge transfer occurs at femtosecond timescale (~50 fs). Field effect transistors fabricated on molecularly thin Ruddlesden-Popper perovskite using graphene contact exhibit electron mobilities ranging from 0.1 to 0.018 cm2V−1s−1 between 1.7 to 200 K. Scanning tunneling spectroscopy studies reveal layer-dependent tunneling barrier and domain size on few-layered Ruddlesden-Popper perovskite.

Prediction of a Two-Transistor Vertical QNOT Gate

A new design of quaternary inverter (QNOT gate) is proposed by means of finite-element simulation. Traditionally, increasing the number of data levels in digital logic circuits was achieved by increasing the number of transistors. Our QNOT gate consists of only two transistors, resembling the binary complementary metal-oxide-semiconductor (CMOS) inverter, yet the two additional levels are generated by controlling the charge-injection barrier and electrode overlap. Furthermore, these two transistors are stacked vertically, meaning that the entire footprint only consumes the area of one single transistor. We explore several key geometrical and material parameters in a series of simulations to show how to systematically modulate and optimize the quaternary logic behaviors.

Elevated-Temperature Space Charge Characteristics and Trapping Mechanism of Cross-Linked Polyethylene Modified by UV-Initiated Grafting MAH

Space charge characteristics of cross-linked polyethylene (XLPE) at elevated temperatures have been evidently improved by the graft modifications with ultraviolet (UV) initiation technique, which can be efficiently utilized in industrial cable manufactures. Maleic anhydride (MAH) of representative cyclic anhydride has been successfully grafted onto polyethylene molecules through UV irradiation process. Thermal stimulation currents and space charge characteristics at the elevated temperatures are coordinately analyzed to elucidate the trapping behavior of blocking charge injection and impeding carrier transport which is caused by grafting MAH. It is also verified from the first-principles calculations that the bound states as charge carrier traps can be introduced by grafting MAH onto polyethylene molecules. Compared with pure XLPE, the remarkably suppressed space charge accumulations at high temperatures have been achieved in XLPE-g-MAH. The polar groups on the grafted MAH can provide deep traps in XLPE-g-MAH, which will increase charge injection barrier by forming a charged layer of Coulomb-potential screening near electrodes and simultaneously reduce the electrical mobility of charge carriers by trap-carrier scattering, resulting in an appreciable suppression of space charge accumulations inside material. The exact consistence of experimental results with the quantum mechanics calculations demonstrates a promising routine for the modification strategy of grafting polar molecules with UV initiation technique in the development of high-voltage DC cable materials.

Theoretical study of charge-transport and optical properties of organic crystals: 4,5,9,10-pyrenediimides

This work presents a systematic study of the conducting and optical properties of a family of aromatic diimides reported recently and discusses the influences of side-chain substitution on the reorganization energies, crystal packing, electronic couplings and charge injection barrier of 4,5,9,10-pyrenediimide (PyDI). Quantum-chemical calculations combined with the Marcus–Hush electron transfer theory revealed that the introduction of a side chain into 4,5,9,10-pyrenediimide increases intermolecular steric interactions and hinders close intermolecular π–π stacking, which results in weak electronic couplings and finally causes lower intrinsic hole and electron mobility in t-C5-PyDI (μh = 0.004 cm2 V−1 s−1 and μe = 0.00003 cm2 V−1 s−1) than in the C5-PyDI crystal (μh = 0.16 cm2 V−1 s−1 and μe = 0.08 cm2 V−1 s−1). Furthermore, electronic spectra of C5-PyDI were simulated and time-dependent density functional theory calculation results showed that the predicted fluorescence maximum of t-C5-PyDI, corresponding to an S 1→S 0 transition process, is located at 485 nm, which is close to the experimental value (480 nm).