boron acceptor
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2021 ◽  
Vol 104 (15) ◽  
Author(s):  
S. G. Pavlov ◽  
D. D. Prikhodko ◽  
S. A. Tarelkin ◽  
V. S. Bormashov ◽  
N. V. Abrosimov ◽  
...  

2021 ◽  
pp. 108629
Author(s):  
D.D. Prikhodko ◽  
S.G. Pavlov ◽  
S.A. Tarelkin ◽  
V.S. Bormashov ◽  
S.G. Buga ◽  
...  

Author(s):  
Ranran Pei ◽  
He Liu ◽  
Changjiang Zhou ◽  
Jingsheng Miao ◽  
Chuluo Yang

Efficient blue thermally activated delayed fluorescent emitters based on organic boron-acceptor are developed with high external quantum efficiencies and finely tuned CIE coordinates.


2020 ◽  
Vol 8 (7) ◽  
pp. 2272-2279 ◽  
Author(s):  
Durai Karthik ◽  
Dae Hyun Ahn ◽  
Jae Hong Ryu ◽  
Hyuna Lee ◽  
Jee Hyun Maeng ◽  
...  

Two new blue TADF emitters, 3CzTB and M3CzB, for application in highly efficient organic light-emitting diodes are reported.


2019 ◽  
Vol 50 (1) ◽  
pp. 363-366
Author(s):  
Jee Hyun Maeng ◽  
Dae Hyun Ahn ◽  
Hyuna Lee ◽  
Ju Young Lee ◽  
Jang Hyuk Kwon

2012 ◽  
Vol 376 (44) ◽  
pp. 2812-2815 ◽  
Author(s):  
V.N. Denisov ◽  
B.N. Mavrin ◽  
S.N. Polyakov ◽  
M.S. Kuznetsov ◽  
S.A. Terentiev ◽  
...  

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
J. Barjon ◽  
T. Tillocher ◽  
N. Habka ◽  
O. Brinza ◽  
J. Achard ◽  
...  

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Timothy Grotjohn ◽  
Shannon Nicley ◽  
Dzung Tran ◽  
Donnie K. Reinhard ◽  
Michael Becker ◽  
...  

AbstractThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.


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