Efficient blue thermally activated delayed fluorescent emitters based on a boranaphtho[3,2,1-de]anthracene acceptor

Efficient blue thermally activated delayed fluorescent emitters based on organic boron-acceptor are developed with high external quantum efficiencies and finely tuned CIE coordinates.

Highly efficient blue thermally activated delayed fluorescence organic light emitting diodes based on tercarbazole donor and boron acceptor dyads

Two new blue TADF emitters, 3CzTB and M3CzB, for application in highly efficient organic light-emitting diodes are reported.

Determination of Boron Concentration in Doped Diamond Films

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Single Crystal Boron-Doped Diamond Synthesis

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.