Boron acceptor concentration in diamond from excitonic recombination intensities

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
J. Barjon ◽  
T. Tillocher ◽  
N. Habka ◽  
O. Brinza ◽  
J. Achard ◽  
...  
Keyword(s):  
Acceptor Concentration ◽  
Boron Acceptor ◽  
Excitonic Recombination

Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

2021 ◽  
pp. 118127
Author(s):  
F. Hájek ◽  
A. Hospodková ◽  
T. Hubáček ◽  
J. Oswald ◽  
J. Pangrác ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Depth Profile ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acceptor Concentration

A quantitative study of the boron acceptor in diamond by Fourier-transform photocurrent spectroscopy

2004 ◽  
Vol 13 (10) ◽  
pp. 1785-1790 ◽  
Author(s):  
R. Kravets ◽  
M. Vanecek ◽  
C. Piccirillo ◽  
A. Mainwood ◽  
M.E. Newton
Keyword(s):  
Fourier Transform ◽  
Quantitative Study ◽  
Photocurrent Spectroscopy ◽  
Boron Acceptor

Comment on “Excitonic Recombination of Degenerate Two-Dimensional Electrons with Localized Photoexcited Holes in a Single Heterojunction Quantum Well”

1995 ◽  
Vol 74 (21) ◽  
pp. 4355-4355 ◽  
Author(s):  
P. O. Holtz ◽  
Q. X. Zhao ◽  
C. I. Harris ◽  
J. P. Bergman ◽  
T. Lundström ◽  
...  
Keyword(s):  
Quantum Well ◽  
Two Dimensional ◽  
Excitonic Recombination

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers

2007 ◽  
Vol 556-557 ◽  
pp. 383-386 ◽  
Author(s):  
John Hennessy ◽  
Tom Ryan
Keyword(s):  
Carrier Lifetime ◽  
Deep Level ◽  
Complex Function ◽  
Band Edge ◽  
Structural Defects ◽  
Band Edge Emission ◽  
Interfacial Defects ◽  
Pl Mapping ◽  
Boron Acceptor ◽  
Excitation Conditions

Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.

Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC

1999 ◽  
Vol 60 (23) ◽  
pp. 15829-15847 ◽  
Author(s):  
A. van Duijn-Arnold ◽  
J. Mol ◽  
R. Verberk ◽  
J. Schmidt ◽  
E. N. Mokhov ◽  
...  
Keyword(s):  
Wave Function ◽  
Spatial Distribution ◽  
Electronic Wave ◽  
Electronic Wave Function ◽  
Boron Acceptor

Fluorescence energy transfer studies in a cross-linked polyurethane network

1995 ◽  
Vol 73 (11) ◽  
pp. 1823-1830 ◽  
Author(s):  
Jie Yang ◽  
Mitchell A. Winnik
Keyword(s):  
Energy Transfer ◽  
Fluorescence Quenching ◽  
Fluorescence Decay ◽  
Critical Distance ◽  
Nonradiative Energy Transfer ◽  
Fluorescence Energy Transfer ◽  
Distribution Analysis ◽  
Analysis Method ◽  
Acceptor Concentration ◽  
Fluorescence Energy

A series of cross-linked polyurethane samples, labeled with dyes suitable for fluorescence energy transfer experiments, were prepared (donor, phenanthrene; acceptor, anthracene). Fluorescence decay profiles for these samples were measured as a function of acceptor concentration. These decays obey Förster nonradiative energy transfer kinetics, with an energy transfer critical distance (R0) of 26.7 Å. Fluorescence intensities, calculated from the decays by integrating the decay profiles, also fit the Perrin model, with a quenching radius (Rs) of 25.6 Å. The fluorescence decay profiles were further examined with a distribution analysis method, which also revealed uniformly distributed donors and acceptors in the polymer matrices. Keywords: fluorescence quenching, fluorescence decay, phenanthrene, anthracene, polyurethane.

scholarly journals Процессы передачи энергии в эвлитите Sr-=SUB=-3-=/SUB=-Y(PO-=SUB=-4-=/SUB=-)-=SUB=-3-=/SUB=-, по отдельности и одновременно легированном ионами Tb-=SUP=-3+-=/SUP=- и Tm-=SUP=-3+-=/SUP=-

2022 ◽  
Vol 130 (1) ◽  
pp. 99
Author(s):  
Xiaowu Hu ◽  
Fabio Piccinelli ◽  
Marco Bettinelli
Keyword(s):  
Energy Transfer ◽  
Optical Spectroscopy ◽  
Emission Spectra ◽  
Cross Relaxation ◽  
Transfer Efficiency ◽  
Relaxation Processes ◽  
Donor Concentration ◽  
Acceptor Concentration ◽  
Transfer Processes ◽  
Double Phosphate

In this work the optical spectroscopy and the energy transfer processes involving the Tb3+and Tm3+ ions, have been studied in eulytite double phosphate hosts of the type Sr3Y(PO4)3 doped with various amounts of the two Ln ions. It has been found that several energy transfer and cross-relaxation processes are active in this class of materials, upon excitation in the 5D4 level of Tb, and in the 1G4 one of Tm. In particular, a Tb→Tm transfer of excitation has been found to quench strongly the 5D4 level of Tb. This process occurs with a transfer efficiency increasing from 0.08 to 0.62, for a donor concentration of 2 mol%, and an acceptor concentration increasing from 2 to 15 mol%. The emission spectra are strongly affected by the presence of Tb⟷Tm energy transfer, and Tm→Tm cross relaxation processes.

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