Resonant boron acceptor states in semiconducting diamond

2021 ◽  
Vol 104 (15) ◽  
Author(s):  
S. G. Pavlov ◽  
D. D. Prikhodko ◽  
S. A. Tarelkin ◽  
V. S. Bormashov ◽  
N. V. Abrosimov ◽  
...  
Keyword(s):  
Semiconducting Diamond ◽  
Boron Acceptor

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

2021 ◽  
Author(s):  
Shengya Zhang ◽  
Zhuangfei Zhang ◽  
Wencai Yi ◽  
Xin Chen ◽  
Xiaobing Liu
Keyword(s):  
Electronic Effect ◽  
Semiconducting Diamond ◽  
Non Destructive

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

2020 ◽  
Vol 528 ◽  
pp. 146998
Author(s):  
J.C. Piñero ◽  
J. de Vecchy ◽  
D. Fernández ◽  
G. Alba ◽  
J. Widiez ◽  
...  
Keyword(s):  
Semiconducting Diamond

A quantitative study of the boron acceptor in diamond by Fourier-transform photocurrent spectroscopy

2004 ◽  
Vol 13 (10) ◽  
pp. 1785-1790 ◽  
Author(s):  
R. Kravets ◽  
M. Vanecek ◽  
C. Piccirillo ◽  
A. Mainwood ◽  
M.E. Newton
Keyword(s):  
Fourier Transform ◽  
Quantitative Study ◽  
Photocurrent Spectroscopy ◽  
Boron Acceptor

scholarly journals Development of Contact Materials for Semiconductor Devices. Ohmic Contacts on Semiconducting Diamond.

Materia Japan ◽  
1994 ◽  
Vol 33 (6) ◽  
pp. 750-754
Author(s):  
Takeshi Tachibana ◽  
Kazushi Hayashi ◽  
Koji Kobashi
Keyword(s):  
Ohmic Contacts ◽  
Semiconductor Devices ◽  
Contact Materials ◽  
Semiconducting Diamond

Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers

2007 ◽  
Vol 556-557 ◽  
pp. 383-386 ◽  
Author(s):  
John Hennessy ◽  
Tom Ryan
Keyword(s):  
Carrier Lifetime ◽  
Deep Level ◽  
Complex Function ◽  
Band Edge ◽  
Structural Defects ◽  
Band Edge Emission ◽  
Interfacial Defects ◽  
Pl Mapping ◽  
Boron Acceptor ◽  
Excitation Conditions

Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.

Magnetoresistance of a p-type Semiconducting Diamond

1957 ◽  
Vol 70 (5) ◽  
pp. 527-530 ◽  
Author(s):  
E W J Mitchell ◽  
P T Wedepohl
Keyword(s):  
Semiconducting Diamond ◽  
P Type
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