Determination of Boron Concentration in Doped Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen
Keyword(s):  
Boron Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Single Crystal Boron-Doped Diamond Synthesis

2009 ◽  
Vol 1203 ◽  
Author(s):  
Timothy Grotjohn ◽  
Shannon Nicley ◽  
Dzung Tran ◽  
Donnie K. Reinhard ◽  
Michael Becker ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

AbstractThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Growth and oxidation of boron-doped diamond films

1995 ◽  
Vol 10 (6) ◽  
pp. 1448-1454 ◽  
Author(s):  
E.N. Farabaugh ◽  
L. Robins ◽  
A. Feldman ◽  
Curtis E. Johnson
Keyword(s):  
Boron Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
Oxidation Rates ◽  
Boron Doped ◽  
Hot Filament

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by secondary ion mass spectroscopy, was 6300 atomic ppm. Raman spectroscopy and x-ray diffraction both confirmed the presence of crystalline diamond in the films. The frequency of the diamond Raman line decreased with increasing boron concentration. This shift may arise from an interaction of the charged carriers (holes) produced by the boron doping and the Raman-active optic phonon. The oxidation rates of doped and undoped films were measured by thermogravimetric analysis at 700 °C in flowing high purity oxygen. Films with a boron concentration of 6300 ppm oxidized at one-tenth the rate of undoped diamond. A layer of B2O3, detected on the surface of an oxidized B-doped film, is believed to act as a protective barrier that decreases the oxidation rate.

Study of Boron-Doped Diamond Films by Microwave Plasma CVD Method

2007 ◽  
Vol 353-358 ◽  
pp. 1883-1886 ◽  
Author(s):  
Riichi Murakami ◽  
Shinichiro Fukui ◽  
Daisuke Yonekura ◽  
Cheolmun Yim
Keyword(s):  
Surface Morphology ◽  
Boron Concentration ◽  
Microwave Plasma ◽  
Liquid Mixture ◽  
Pure Titanium ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Nano Crystalline

Boron-doped diamonds were deposited by microwave plasma chemical vapor deposition (MPCVD) method in order to investigate the influence of inlet boron concentration on the film properties. The substrate material of the specimens was pure titanium (99.9 %). Boron source was introduced into the vacuum chamber by bubbling of B2O3, acetone and methanol mixture. Samples were produced with different B2O3 concentrations in mixture (1000 ppm, 5000 ppm, and 10000 ppm). The surface morphology of the samples was observed by scanning electron microscope (SEM). X-ray diffraction was used to identify crystal structures of the films. Secondary ion mass spectroscopy was used to examine the qualitative boron contents in the films. For low B2O3 concentrations in liquid mixture (1000 ppm), the surface morphology of the film showed both micro crystalline diamond and nano crystalline diamond. For medium B2O3 concentrations in liquid mixture (5000 ppm), the surface morphology of the film was also consisted of micro crystalline diamond and nano crystalline diamond. However, the content of micro crystalline diamond decreased in comparison with low B2O3 concentration. For high B2O3 concentration in liquid mixture (10000 ppm), the surface morphology of the film was almost dominated by nano crystalline diamond. Therefore, the crystal size of boron doped diamond decreased with increasing boron concentration. From these results, it appears that boron will restrain the growth of diamond crystal during deposition.

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

2011 ◽  
Vol 257 (6) ◽  
pp. 1854-1858 ◽  
Author(s):  
Pankaj M. Koinkar ◽  
Sandip S. Patil ◽  
Tae-Gyu Kim ◽  
Daisuke Yonekura ◽  
Mahendra A. More ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Emission Characteristics ◽  
Boron Doped Diamond ◽  
Boron Doped

High-speed synthesis of heavily boron-doped diamond films by in-liquid microwave plasma CVD

2019 ◽  
Vol 92 ◽  
pp. 41-46 ◽  
Author(s):  
Yohei Harada ◽  
Ryota Hishinuma ◽  
Nicolae Spătaru ◽  
Yusei Sakurai ◽  
Kazuya Miyasaka ◽  
...  
Keyword(s):  
High Speed ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Plasma Cvd ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Microwave Plasma Cvd
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