Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Solution-processed ITO and Stacked (BLT/PZT) Gate Insulator

2011 ◽  
Author(s):  
B. N. Q. Trinh ◽  
T. Miyasako ◽  
T. Kaneda ◽  
P. V. Thanh ◽  
P. T. Tue ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

2017 ◽  
Author(s):  
Takanori Takahashi ◽  
Kento Oikawa ◽  
Takeshi Hoga ◽  
Yukiharu Uraoka ◽  
Kiyoshi Uchiyama
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Amorphous Ingazno

All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

RSC Advances ◽  
2015 ◽  
Vol 5 (128) ◽  
pp. 105785-105788 ◽  
Author(s):  
Jin-Yong Hong ◽  
Dai Gun Yoon ◽  
Byung Doo Chin ◽  
Sung Hyun Kim
Keyword(s):  
Thin Film ◽  
Transition Region ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Crystalline Domains

An all-solution processed flexible thin-film transistor based on a PANI/PETA gate/gate insulator exhibited higher mobility than the device with a Si/SiO2 gate/gate insulator because of large crystalline domains in the transition region.

scholarly journals Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

2018 ◽  
Vol 8 (5) ◽  
pp. 806 ◽  
Author(s):  
Shangxiong Zhou ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Bias Stability ◽  
Stability Enhancement

Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

2019 ◽  
Vol 673 ◽  
pp. 14-18 ◽  
Author(s):  
Hyeong Jun Cho ◽  
Dong-Hoon Lee ◽  
Eung-Kyu Park ◽  
Min Su Kim ◽  
So Young Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuits ◽  
Gate Insulator ◽  
Solution Processed ◽  
Inorganic Hybrid

scholarly journals Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3856-3856
Author(s):  
Jin-Yong Hong ◽  
Kyoung-Hwan Shin ◽  
Dai Gun Yoon ◽  
Byung Doo Chin ◽  
Sung Hyun Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Jin Yong

Correction for ‘All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator’ by Jin-Yong Hong et al., RSC Adv., 2015, 5, 105785–105788.

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