scholarly journals Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

2018 ◽  
Vol 8 (5) ◽  
pp. 806 ◽  
Author(s):  
Shangxiong Zhou ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Bias Stability ◽  
Stability Enhancement

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator

2017 ◽  
Vol 651 (1) ◽  
pp. 235-242
Author(s):  
Xingwei Ding ◽  
Cunping Qin ◽  
Tao Xu ◽  
Jiantao Song ◽  
Jianhua Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Stability Enhancement

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

2017 ◽  
Author(s):  
Takanori Takahashi ◽  
Kento Oikawa ◽  
Takeshi Hoga ◽  
Yukiharu Uraoka ◽  
Kiyoshi Uchiyama
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Amorphous Ingazno

All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

RSC Advances ◽  
2015 ◽  
Vol 5 (128) ◽  
pp. 105785-105788 ◽  
Author(s):  
Jin-Yong Hong ◽  
Dai Gun Yoon ◽  
Byung Doo Chin ◽  
Sung Hyun Kim
Keyword(s):  
Thin Film ◽  
Transition Region ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Crystalline Domains

An all-solution processed flexible thin-film transistor based on a PANI/PETA gate/gate insulator exhibited higher mobility than the device with a Si/SiO2 gate/gate insulator because of large crystalline domains in the transition region.

Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

2019 ◽  
Vol 673 ◽  
pp. 14-18 ◽  
Author(s):  
Hyeong Jun Cho ◽  
Dong-Hoon Lee ◽  
Eung-Kyu Park ◽  
Min Su Kim ◽  
So Young Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuits ◽  
Gate Insulator ◽  
Solution Processed ◽  
Inorganic Hybrid
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