All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator
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An all-solution processed flexible thin-film transistor based on a PANI/PETA gate/gate insulator exhibited higher mobility than the device with a Si/SiO2 gate/gate insulator because of large crystalline domains in the transition region.
2017 ◽
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2019 ◽
Vol 476
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pp. 374-377
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2016 ◽
Vol 16
(3)
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pp. 2632-2636
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1998 ◽
Vol 45
(12)
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pp. 2548-2551
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