Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

2017 ◽  
Author(s):  
Takanori Takahashi ◽  
Kento Oikawa ◽  
Takeshi Hoga ◽  
Yukiharu Uraoka ◽  
Kiyoshi Uchiyama
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Amorphous Ingazno

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

RSC Advances ◽  
2015 ◽  
Vol 5 (128) ◽  
pp. 105785-105788 ◽  
Author(s):  
Jin-Yong Hong ◽  
Dai Gun Yoon ◽  
Byung Doo Chin ◽  
Sung Hyun Kim
Keyword(s):  
Thin Film ◽  
Transition Region ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Crystalline Domains

An all-solution processed flexible thin-film transistor based on a PANI/PETA gate/gate insulator exhibited higher mobility than the device with a Si/SiO2 gate/gate insulator because of large crystalline domains in the transition region.

scholarly journals Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

2018 ◽  
Vol 8 (5) ◽  
pp. 806 ◽  
Author(s):  
Shangxiong Zhou ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Wei Cai ◽  
Zhennan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Solution Processed ◽  
Bias Stability ◽  
Stability Enhancement

Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

2019 ◽  
Vol 673 ◽  
pp. 14-18 ◽  
Author(s):  
Hyeong Jun Cho ◽  
Dong-Hoon Lee ◽  
Eung-Kyu Park ◽  
Min Su Kim ◽  
So Young Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuits ◽  
Gate Insulator ◽  
Solution Processed ◽  
Inorganic Hybrid

Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2 O6 as Gate Insulator Deposited by Sputtering Method

2018 ◽  
Vol 216 (5) ◽  
pp. 1700773 ◽  
Author(s):  
Takanori Takahashi ◽  
Takeshi Hoga ◽  
Ryoko Miyanaga ◽  
Kento Oikawa ◽  
Mami N. Fujii ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
High K ◽  
Amorphous Ingazno
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