Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect
2014 ◽
Vol 53
(4S)
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pp. 04EP17
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2005 ◽
Vol 44
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pp. 5889-5892
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2003 ◽
Vol 42
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pp. 1993-1998
2008 ◽
Vol 47
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pp. 8739-8742
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pp. 767-769
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