scholarly journals Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage

2014 ◽  
Vol 63 (23) ◽  
pp. 237302
Author(s):  
Liu Xiang-Yu ◽  
Hu Hui-Yong ◽  
Zhang He-Ming ◽  
Xuan Rong-Xi ◽  
Song Jian-Jun ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Strained Sige

scholarly journals A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 596
Author(s):  
Yu-Yang Tsai ◽  
Chun-Yu Kuo ◽  
Bo-Chang Li ◽  
Po-Wen Chiu ◽  
Klaus Y. J. Hsu
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Photodiode ◽  
Effect Transistor ◽  
Logarithmic Dependence

In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.

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