Mechanism of nitrogen coimplant for suppressing boron penetration in p+‐polycrystalline silicon gate of p metal–oxide semiconductor field effect transistor

1996 ◽  
Vol 69 (12) ◽  
pp. 1781-1782 ◽  
Author(s):  
T. S. Chao ◽  
M. C. Liaw ◽  
C. H. Chu ◽  
C. Y. Chang ◽  
C. H. Chien ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Boron Penetration

scholarly journals A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 596
Author(s):  
Yu-Yang Tsai ◽  
Chun-Yu Kuo ◽  
Bo-Chang Li ◽  
Po-Wen Chiu ◽  
Klaus Y. J. Hsu
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Photodiode ◽  
Effect Transistor ◽  
Logarithmic Dependence

In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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