Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor

Hu Hui-Yong;  Liu Xiang-Yu;  Lian Yong-Chang;  Zhang He-Ming;  Song Jian-Jun;  Xuan Rong-Xi;  Shu Bin

doi:10.7498/aps.63.236102

Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.63.236102 ◽

2014 ◽

Vol 63 (23) ◽

pp. 236102

Author(s):

Hu Hui-Yong ◽

Liu Xiang-Yu ◽

Lian Yong-Chang ◽

Zhang He-Ming ◽

Song Jian-Jun ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Radiation Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor ◽

Γ Ray ◽

Dose Radiation

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Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.66.076101 ◽

2017 ◽

Vol 66 (7) ◽

pp. 076101

Author(s):

Hao Min-Ru ◽

Hu Hui-Yong ◽

Liao Chen-Guang ◽

Wang Bin ◽

Zhao Xiao-Hong ◽

...

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Field Effect ◽

Field Effect Transistor ◽

Radiation Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor ◽

Dose Radiation

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Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.62.108501 ◽

2013 ◽

Vol 62 (10) ◽

pp. 108501

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Fan Xiao-Jiao ◽

Zhuo Qing-Qing

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Strained Si ◽

Fully Depleted ◽

Effect Transistor

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Cited By ~ 7

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

Thin Silicon

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Chinese Physics B ◽

10.1088/1674-1056/24/3/037303 ◽

2015 ◽

Vol 24 (3) ◽

pp. 037303

Author(s):

Min-Min Fan ◽

Jing-Ping Xu ◽

Lu Liu ◽

Yu-Rong Bai ◽

Yong Huang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fringing Capacitance

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Controlling the threshold voltage of a metal–oxide–semiconductor field effect transistor by molecular protonation of the Si:SiO[sub 2] interface

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491543 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1706 ◽

Cited By ~ 11

Author(s):

Jinman Yang ◽

L. de la Garza ◽

T. J. Thornton ◽

M. Kozicki ◽

D. Gust

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

Journal of Applied Physics ◽

10.1063/1.2161800 ◽

2006 ◽

Vol 99 (3) ◽

pp. 034501 ◽

Cited By ~ 9

Author(s):

G. K. Dalapati ◽

S. Chattopadhyay ◽

L. S. Driscoll ◽

A. G. O’Neill ◽

K. S. K. Kwa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Small Signal ◽

Channel Conductance ◽

Strained Si ◽

Conductance Method ◽

Effect Transistor ◽

Signal Channel

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Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2036 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2036-2040 ◽

Cited By ~ 15

Author(s):

Seiji Horiguchi ◽

Akira Fujiwara ◽

Hiroshi Inokawa ◽

Yasuo Takahashi

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Dependence ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Back Gate ◽

Effect Transistor

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Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.60.027305 ◽

2011 ◽

Vol 60 (2) ◽

pp. 027305

Author(s):

Wu Tie-Feng ◽

Zhang He-Ming ◽

Wang Guan-Yu ◽

Hu Hui-Yong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Predicting Model ◽

Effect Transistor ◽

Gate Tunneling

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Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor

Acta Physica Sinica ◽

10.7498/aps.63.226101 ◽

2014 ◽

Vol 63 (22) ◽

pp. 226101

Author(s):

Wang Xin ◽

Lu Wu ◽

Wu Xue ◽

Ma Wu-Ying ◽

Cui Jiang-Wei ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Radiation Effect ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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