scholarly journals Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

2013 ◽  
Vol 62 (10) ◽  
pp. 108501
Author(s):  
Xin Yan-Hui ◽  
Liu Hong-Xia ◽  
Fan Xiao-Jiao ◽  
Zhuo Qing-Qing
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Fully Depleted ◽  
Effect Transistor

scholarly journals Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor
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