Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

2006 ◽  
Vol 99 (3) ◽  
pp. 034501 ◽  
Author(s):  
G. K. Dalapati ◽  
S. Chattopadhyay ◽  
L. S. Driscoll ◽  
A. G. O’Neill ◽  
K. S. K. Kwa ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Small Signal ◽  
Channel Conductance ◽  
Strained Si ◽  
Conductance Method ◽  
Effect Transistor ◽  
Signal Channel

High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2412-2414 ◽  
Author(s):  
Deepak K. Nayak ◽  
Jason C. S. Woo ◽  
Jin S. Park ◽  
Kang L. Wang ◽  
Ken P. MacWilliams
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor

scholarly journals A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor

2015 ◽  
Vol 64 (6) ◽  
pp. 067305
Author(s):  
L Yi ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Yang Jin-Yong ◽  
Yin Shu-Juan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document