scholarly journals Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials

2013 ◽  
Vol 62 (11) ◽  
pp. 117303
Author(s):  
Zhang Bai-Qiang ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Ning Jin ◽  
Tang Hai-Ma ◽  
...  
Keyword(s):  
Charge Density ◽  
Oxide Layer ◽  
Positive Charge ◽  
Buried Oxide ◽  
Fixed Positive Charge ◽  
Simox Soi

scholarly journals Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

2007 ◽  
Vol 56 (9) ◽  
pp. 5446
Author(s):  
Zheng Zhong-Shan ◽  
Zhang En-Xia ◽  
Liu Zhong-Li ◽  
Zhang Zheng-Xuan ◽  
Li Ning ◽  
...  
Keyword(s):  
Charge Density ◽  
Positive Charge ◽  
Buried Oxide ◽  
Fixed Positive Charge

scholarly journals Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers

2011 ◽  
Vol 60 (5) ◽  
pp. 056104
Author(s):  
Zhang En-Xia ◽  
Tang Hai-Ma ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Li Ning ◽  
...  
Keyword(s):  
Charge Density ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Buried Oxide

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

2011 ◽  
Vol 26 (9) ◽  
pp. 095005 ◽  
Author(s):  
S E Jamali Mahabadi ◽  
Ali A Orouji ◽  
P Keshavarzi ◽  
Hamid Amini Moghadam
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Self Heating ◽  
Buried Oxide

Investigation of polarization mechanisms on unibond buried oxide layer

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2129-2132
Author(s):  
V. Tsouti ◽  
G. Papaioannou ◽  
J. Jomaah ◽  
F. Balestra
Keyword(s):  
Oxide Layer ◽  
Buried Oxide

Charge density studies on methylene blue – a potential anti-Alzheimer agent

2018 ◽  
Vol 73 (2) ◽  
pp. 99-108 ◽  
Author(s):  
Peter Luger ◽  
Birger Dittrich ◽  
Leonard Benecke ◽  
Hannes Sterzel
Keyword(s):  
Methylene Blue ◽  
Charge Density ◽  
Molecular Electrostatic Potential ◽  
Positive Charge ◽  
Atomic Charges ◽  
Charge Densities ◽  
Density Distributions ◽  
Atomic Properties ◽  
Counter Ions ◽  
Medical Interest

AbstractMotivated by the medical interest in methylene blue as potential anti-Alzheimer agent, the charge densities of three salt structures containing the methylene blue cation with nitrate (as dihydrate), chloride (as pentahydrate) and thiocyanate counter-ions were generated by application of the invariom formalism and examined. The so-obtained charge density distributions were analyzed using the QTAIM formalism to yield bond topological and atomic properties. The atomic charges on the methylene blue cation indicate a delocalized charge distribution; only a small positive charge on the sulfur atom was found. Electrostatic potentials mapped onto iso-surfaces of electron density for the cations, and for the methylene blue cations with anions, were compared. The effect of hydrogen disorder on the molecular electrostatic potential was investigated for the thiocyanate structure.

Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

2000 ◽  
pp. 195-204 ◽  
Author(s):  
S. I. Romanov ◽  
A. V. Dvurechenskii ◽  
Yu. I. Yakovlev ◽  
R. Grötzschel ◽  
U. Kreissig ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Buried Oxide
Sign in / Sign up

Export Citation Format

Share Document