scholarly journals Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers

2011 ◽  
Vol 60 (5) ◽  
pp. 056104
Author(s):  
Zhang En-Xia ◽  
Tang Hai-Ma ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Li Ning ◽  
...  
Keyword(s):  
Charge Density ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Buried Oxide

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

2010 ◽  
Vol 19 (10) ◽  
pp. 106106 ◽  
Author(s):  
Tang Hai-Ma ◽  
Zheng Zhong-Shan ◽  
Zhang En-Xia ◽  
Yu Fang ◽  
Li Ning ◽  
...  
Keyword(s):  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Nitrogen Implantation ◽  
Buried Oxide

scholarly journals Прогнозирование величины захваченного заряда в захороненном оксиде кремния структур кремний-на-изоляторе с применением эффекта Пула-Френкеля

2020 ◽  
Vol 54 (5) ◽  
pp. 441
Author(s):  
А.А. Ширяев ◽  
В.М. Воротынцев ◽  
Е.Л. Шоболов
Keyword(s):  
Silicon Oxide ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Frenkel Effect ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Current Value ◽  
Dose Radiation

The opportunity to predict trapped charge value in buried silicon oxide of silicon-on-insulator structures using Poole−Frenkel effect was investigated. Using measuring and modeling of current–voltage characteristics of buried silicon oxide at different temperatures conditions for Poole−Frenkel effect in this layer were determined. Processes taking place in buried oxide during measurement of current–voltage characteristics and annealing were considered. Conditions of thermal field treatment of buried oxide for radiation exposure imitation using injection were determined. Dependence of accumulated positive charge value in buried silicon oxide as a result of injection on Poole−Frenkel current value was estimated. The opportunity to use Poole−Frenkel effect for buried oxide defectiveness evaluation during manufacturing of microcircuits with enhanced dose radiation hardness is shown.

EBIC Study of Silicon on Insulator Structures Formed by High Dose Nitrogen Implantation

1989 ◽  
Vol 136 (3) ◽  
pp. 876-878 ◽  
Author(s):  
R. Kwor ◽  
R. J. Matson ◽  
M. M. Al‐Jassim ◽  
S. Polchlopek ◽  
P. L. F. Hemment ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Implantation

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films

1983 ◽  
Vol 14 (6) ◽  
pp. 88-107 ◽  
Author(s):  
K. Das ◽  
G. Shorthouse ◽  
J. Butcher ◽  
K.V. Anand
Keyword(s):  
Oxide Films ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Buried Oxide

scholarly journals Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials

2013 ◽  
Vol 62 (11) ◽  
pp. 117303
Author(s):  
Zhang Bai-Qiang ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Ning Jin ◽  
Tang Hai-Ma ◽  
...  
Keyword(s):  
Charge Density ◽  
Oxide Layer ◽  
Positive Charge ◽  
Buried Oxide ◽  
Fixed Positive Charge ◽  
Simox Soi

Microstructure of silicon-on-insulator structures produced by high dose nitrogen implantation of silicon

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 925-928 ◽  
Author(s):  
CD Meekison ◽  
GR Booker ◽  
KJ Reeson ◽  
PLF Hemment ◽  
RJ Chater ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Implantation
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