scholarly journals Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

2007 ◽  
Vol 56 (9) ◽  
pp. 5446
Author(s):  
Zheng Zhong-Shan ◽  
Zhang En-Xia ◽  
Liu Zhong-Li ◽  
Zhang Zheng-Xuan ◽  
Li Ning ◽  
...  
2013 ◽  
Vol 62 (11) ◽  
pp. 117303
Author(s):  
Zhang Bai-Qiang ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Ning Jin ◽  
Tang Hai-Ma ◽  
...  

2011 ◽  
Vol 60 (5) ◽  
pp. 056104
Author(s):  
Zhang En-Xia ◽  
Tang Hai-Ma ◽  
Zheng Zhong-Shan ◽  
Yu Fang ◽  
Li Ning ◽  
...  

2018 ◽  
Vol 73 (2) ◽  
pp. 99-108 ◽  
Author(s):  
Peter Luger ◽  
Birger Dittrich ◽  
Leonard Benecke ◽  
Hannes Sterzel

AbstractMotivated by the medical interest in methylene blue as potential anti-Alzheimer agent, the charge densities of three salt structures containing the methylene blue cation with nitrate (as dihydrate), chloride (as pentahydrate) and thiocyanate counter-ions were generated by application of the invariom formalism and examined. The so-obtained charge density distributions were analyzed using the QTAIM formalism to yield bond topological and atomic properties. The atomic charges on the methylene blue cation indicate a delocalized charge distribution; only a small positive charge on the sulfur atom was found. Electrostatic potentials mapped onto iso-surfaces of electron density for the cations, and for the methylene blue cations with anions, were compared. The effect of hydrogen disorder on the molecular electrostatic potential was investigated for the thiocyanate structure.


2014 ◽  
Vol 70 (a1) ◽  
pp. C969-C969
Author(s):  
Peter Luger ◽  
Stefan Mebs ◽  
Manuela Weber ◽  
Birger Dittrich

The average age of people is increasing continuously thanks to the progress in the medicinal sciences and further social advances. As a consequence, however, diseases which affect people more likely at a higher age also increase. In this course Alzheimer's disease (AD) and related brain disorders distribute rapidly and have to be taken more serious. One of the most frequently applied drugs against AD is donepezil®. Its function is a reversible inhibition of acetylcholinesterase (AChE), thereby reducing the deficit of acetylcholine associated with the occurrence of AD. As one result from the charge density (CD) of the small-molecule structure containing the donepezilium cation comparable electronic interactions were identified as in the macromolecular TcAChE-donepezil complex which were made visible by electrostatic potential and Hirshfeld surfaces.[1] Two newer developments of Alzheimer agents are bexarotene and methylene blue. For the first one a therapeutic effect on AD in a mouse model was recently reported. From a comparative CD study on bexarotene and its disila analogue differences in the electrostatic potentials were identified, while the spherical structures showed no significant differences. The second one, methylene blue, targets the abnormal tangle type tau protein aggregation inside the nerve cells in the brain and stops its spread. The molecule is positively charged with various counterions. From the CD an answer to the not yet understood question is expected whether the formal positive charge is localized or delocalized.


Author(s):  
А.А. Ширяев ◽  
В.М. Воротынцев ◽  
Е.Л. Шоболов

The opportunity to predict trapped charge value in buried silicon oxide of silicon-on-insulator structures using Poole−Frenkel effect was investigated. Using measuring and modeling of current–voltage characteristics of buried silicon oxide at different temperatures conditions for Poole−Frenkel effect in this layer were determined. Processes taking place in buried oxide during measurement of current–voltage characteristics and annealing were considered. Conditions of thermal field treatment of buried oxide for radiation exposure imitation using injection were determined. Dependence of accumulated positive charge value in buried silicon oxide as a result of injection on Poole−Frenkel current value was estimated. The opportunity to use Poole−Frenkel effect for buried oxide defectiveness evaluation during manufacturing of microcircuits with enhanced dose radiation hardness is shown.


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