scholarly journals Study on the optical and electrical properties of plasma for the deposition of microcrystalline silicon

2008 ◽  
Vol 57 (5) ◽  
pp. 3022
Author(s):  
Zhang Fa-Rong ◽  
Zhang Xiao-Dan ◽  
Amanatides E. ◽  
Mataras D. ◽  
Zhao Jing ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon

scholarly journals Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

1996 ◽  
Vol 452 ◽  
Author(s):  
N. Beck ◽  
P. Orres ◽  
J. Fric ◽  
Z. Remeš ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Time Of Flight ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Transient Time ◽  
Deep Traps ◽  
Flight Measurements ◽  
Strong Dilution

AbstractWe show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD

1991 ◽  
Vol 219 ◽  
Author(s):  
F. Demichelis ◽  
C. F. Pirri ◽  
E. Tresso ◽  
G. Dellamea ◽  
V. Rigato ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Systematic Investigation ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Window Material

ABSTRACTExperimental results on a systematic investigation on the elemental composition, structural, optical and electrical properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Deposition.The doped samples show high values of dark conductivity accompanied by good optical properties so to satisfy the requirements for heterojunction window material.

Influence of Carbon on Structural, Optical and Electrical Properties of Microcrystalline Silicon Carbide.

1992 ◽  
Vol 258 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
E. Tresso ◽  
G. DellaMea ◽  
A. Quaranta ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Elemental Composition ◽  
High Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Power Density ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon

ABSTRACTMicrocrystalline films of SiC.H have been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiH4+CH4+H2 mixtures with high power density and high H2 dilution, at variable CH4/SiH4 ratios. Their elemental composition, structural, optical and electrical properties have been investigated in order to evidence the influence of hydrogen and carbon on microcrystallinity.

Optical and Electrical Properties of Organic Conducting Polymers

2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon
Keyword(s):  
Electrical Properties ◽  
Conjugated Polymer ◽  
Polymeric Materials ◽  
Quantum Mechanical ◽  
Optical And Electrical Properties ◽  
Electrically Conducting ◽  
Temperature Ranges ◽  
Lithium Tetrafluoroborate ◽  
Absorbance Peak ◽  
Polymerization Method

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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