Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

scholarly journals Formamidinium Lead Iodide Perovskite Films with Polyvinylpyrrolidone Additive for Active Layer in Perovskite Solar Cells, Enhanced Stability and Electrical Conductivity

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4594
Author(s):  
Vedran Kojić ◽  
Mario Bohač ◽  
Arijeta Bafti ◽  
Luka Pavić ◽  
Krešimir Salamon ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Active Layer ◽  
Electrical Impedance Spectroscopy ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Ambient Atmosphere ◽  
Optical And Electrical Properties ◽  
Lead Iodide

In this paper, we studied the influence of polyvinylpyrrolidone (PVP) as a stabilization additive on optical and electrical properties of perovskite formamidinium lead iodide (FAPI) polycrystalline thin films on ZnO nanorods (ZNR). FAPI (as an active layer) was deposited from a single solution on ZNR (low temperature processed electron transport layer) using a one-step method with the inclusion of an anti-solvent. The role of PVP in the formation of the active layer was investigated by scanning electron microscopy and contact angle measurements to observe the effect on morphology, while X-ray diffraction was used as a method to study the stability of the film in an ambient environment. The effect of the PVP additive on the optical and electrical properties of the perovskite thin films was studied via photoluminescence, UV-Vis measurements, and electrical impedance spectroscopy. We have demonstrated that PVP inclusion in solution-processed perovskite FAPI thin films prevents the degradation of the film in an ambient atmosphere after aging for 2 months. The inclusion of the PVP also improves the infiltration of FAPI perovskite into ZnO nanostructures, increases electrical conductivity and radiative recombination of the photo-generated charge carriers. These results show promising information for promoting PVP stabilized FAPI perovskites for the new generation of photovoltaic devices.

scholarly journals Optical and Electrical Properties of Graphite Thin Films Prepared by Different Methods

2020 ◽  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electron Beam ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Electron Beam Evaporation ◽  
Specific Electrical Conductivity ◽  
Simultaneous Increase ◽  
Optical And Electrical Properties

The paper reports on the structural, optical and electrical properties of graphite thin films prepared by two methods: the vacuum-free method "Pencil-on-semiconductor" and via the electron beam evaporation. Graphite thin films prepared by the non-vacuum method has annealed at a temperature of 920K.The transmission spectra of the investigated graphite films and the electrical properties of these thin films were measured at T = 300 K. The value of the height of barriers Eb at the grain boundaries and the temperature dependence of the electrical conductivity in the range ln(σ·T1/2) = f(103/T) were determined, It is established that the height of the barrier at the grain boundaries for the drawn graphite films is Eb = 0.03 eV, for annealed Eb = 0.01 eV and for the graphite films deposited by the electron beam evaporation Eb = 0.04 eV, ie for annealed film the barrier height is the smallest. It is shown that graphite films deposited by the electron beam evaporation reveals the highest transmittance (T550 ≈ 60%), and the transmission of drawn films is the lowest, annealing leads to its increase. The minimum values ​​of transmission at a wavelength λ = 250nm are due to the scattering of light at the defects that are formed at the grain boundaries. Annealed graphite films have been found to possess the best structural perfection because they have the lowest resistivity compared to non-annealed films and electron-beam films and have the lowest barrier height. Simultaneous increase of transmission in the whole spectral range, increase of specific electrical conductivity and decrease of potential barrier at grain boundaries of the annealed drawn graphite film clearly indicate ordering of drawn graphite flakes transferred onto anew substrate, which led to the reduction of light scattering and the improvement of charge transport due to the larger area of ​​overlap between graphite flakes.

scholarly journals Preparation of polymer thin film using as NH3 gas Sensor

2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Organic Semiconductor ◽  
Glass Substrate ◽  
Room Temperature ◽  
Oxidative Polymerization ◽  
Optical And Electrical Properties ◽  
Polymer Thin Film

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

Structural, optical and electrical properties of transparent conducting CuInO2 thin films prepared by RF sputtering

2005 ◽  
Vol 865 ◽  
Author(s):  
Bin Yang ◽  
Yunbin He ◽  
Angalika Polity ◽  
Bruno K. Meyer
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Band Gap ◽  
Rf Sputtering ◽  
Wavelength Dependence ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Transparent Conducting ◽  
Delafossite Structure

AbstractThe transparent conducting CuInO2 thin films were prepared by radio frequency (RF) reactive sputtering and post growth annealing. A study of structural, optical, and electrical properties was performed on the films. The crystalline phase in the films was identified to be the delafossite structure. The optical properties, such as the wavelength dependence of the transmittance and the band gap energy, were determined. The average transmittance is 70% in the wavelength range of 400-1100 nm and the band gap is ˜3.7 eV. The temperaturedependence of electrical conductivity in the CuInO2 delafossite thin films was measured from 70 to 400K. The resistivity, carrier density, and mobility of the thin films at 300K were 1.8x101 Δcm, 1.6x1019 cm-3 and 2x10-1 cm2/Vs, respectively. Hall coefficient indicated that the CuInO2 thin films are n-type conductors. The electrical conductivity showed semiconducting type at room temperature.

scholarly journals Laser power density effect on the properties of Sb2S3 thin films prepared by pulsed laser assisted chemical bath deposition

2019 ◽  
pp. 1-6
Author(s):  
Nabile Edith Rodríguez-García ◽  
Felipe Adrián Vázquez-Gálvez ◽  
Fernando Estrada-Saldaña ◽  
Israel Hernández-Hernández
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Bath Deposition ◽  
Irradiation Time ◽  
Sodium Thiosulfate ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
X Ray ◽  
Antimony Sulfide ◽  
Vis Spectroscopy

Antimony Sulfide (Sb2S3) thin films were prepared using the laser assisted chemical bath deposition technique. The precursors used in the chemical bath were antimony chloride and sodium thiosulfate, the deposit was made at room temperature on glass substrate, while it was irradiated with a wavelength of 532 nm of the pulsed Nd:YAG laser. In this work, we studied the effects of energy density (1.97 x 107 and 7.07 x 106 W/cm2) and the irradiation time (30, 45 and 60 min) during the deposition process on the structure and the optical and electrical properties of the antimony sulfide films. The structure, composition, and optical and electrical properties were analyzed by X-Ray Diffraction (XRD), Raman Spectroscopy and X-Ray Emitted Photoelectron Spectroscopy (XPS), UV-Vis spectroscopy and photoconductivity. The results showed that the laser assisted chemical deposition technique is an effective synthesis technique for obtaining thin films of antimony sulfide for optoelectronic applications or in solar cells.

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