In situcorrelation between the optical and electrical properties of thin intrinsic and n-type microcrystalline silicon films

1997 ◽  
Vol 81 (11) ◽  
pp. 7282-7288 ◽  
Author(s):  
S. Hamma ◽  
P. Roca i Cabarrocas
Keyword(s):  
Electrical Properties ◽  
Silicon Films ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon

Structural, Optical, and Electrical Properties of Amorphous Silicon Films

1970 ◽  
Vol 1 (6) ◽  
pp. 2632-2641 ◽  
Author(s):  
M. H. Brodsky ◽  
R. S. Title ◽  
K. Weiser ◽  
G. D. Pettit
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Optical And Electrical Properties

scholarly journals Study on the optical and electrical properties of plasma for the deposition of microcrystalline silicon

2008 ◽  
Vol 57 (5) ◽  
pp. 3022
Author(s):  
Zhang Fa-Rong ◽  
Zhang Xiao-Dan ◽  
Amanatides E. ◽  
Mataras D. ◽  
Zhao Jing ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon

scholarly journals Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

1996 ◽  
Vol 452 ◽  
Author(s):  
N. Beck ◽  
P. Orres ◽  
J. Fric ◽  
Z. Remeš ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Time Of Flight ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Transient Time ◽  
Deep Traps ◽  
Flight Measurements ◽  
Strong Dilution

AbstractWe show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Flückiger ◽  
J. Meier ◽  
G. Crovini ◽  
F. Demichelis ◽  
F. Giorgis ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical Absorption ◽  
Silicon Films ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
Deposition Rates ◽  
Structural And Electrical Properties ◽  
Two Systems ◽  
Plasma Methods

ABSTRACTMicrocrystalline silicon films deposited by plasma methods have an optical absorption for photon energies above 2.0 eV lower than a-Si:H films and can be efficiently doped with boron or phosphorus. The most widely used deposition technique is the 13.56 MHz PECVD. However quite recently µc-Si:H films were grown at high deposition rates by the 70 MHz PECVD. In this work the authors report on a comparison between µc-Si:H films deposited by both 70 MHz and 13.56 MHz techniques. Particular attention has been devoted to differences and similarities between structural, compositional and electrical properties of the films deposited with the two systems.

Sign in / Sign up

Export Citation Format

Share Document