Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD

1991 ◽  
Vol 219 ◽  
Author(s):  
F. Demichelis ◽  
C. F. Pirri ◽  
E. Tresso ◽  
G. Dellamea ◽  
V. Rigato ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Systematic Investigation ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Window Material

ABSTRACTExperimental results on a systematic investigation on the elemental composition, structural, optical and electrical properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Deposition.The doped samples show high values of dark conductivity accompanied by good optical properties so to satisfy the requirements for heterojunction window material.

Influence of Carbon on Structural, Optical and Electrical Properties of Microcrystalline Silicon Carbide.

1992 ◽  
Vol 258 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
E. Tresso ◽  
G. DellaMea ◽  
A. Quaranta ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Elemental Composition ◽  
High Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Power Density ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon

ABSTRACTMicrocrystalline films of SiC.H have been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiH4+CH4+H2 mixtures with high power density and high H2 dilution, at variable CH4/SiH4 ratios. Their elemental composition, structural, optical and electrical properties have been investigated in order to evidence the influence of hydrogen and carbon on microcrystallinity.

High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source

1999 ◽  
Vol 557 ◽  
Author(s):  
Seung Yeop Myong ◽  
Hyung Kew Lee ◽  
Euisik Yoon ◽  
Koeng Su Lim
Keyword(s):  
Silicon Carbide ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
Boron Doped

AbstractHydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (~10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Structural, morphological, optical and electrical properties of Sb-doped SnO2 thin films obtained by aerosol assisted chemical vapor deposition

2017 ◽  
Vol 638 ◽  
pp. 22-27 ◽  
Author(s):  
A. Heiras-Trevizo ◽  
P. Amézaga-Madrid ◽  
L. Corral-Bustamante ◽  
W. Antúnez-Flores ◽  
P. Pizá Ruiz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Sno2 Thin Films

Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

1994 ◽  
Vol 336 ◽  
Author(s):  
K. Gaughan ◽  
J.M. Viner ◽  
P.C. Taylor
Keyword(s):  
Electrical Conductivity ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photothermal Deflection Spectroscopy ◽  
Optical And Electronic Properties ◽  
Photothermal Deflection

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

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