scholarly journals Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application

10.5772/6879 ◽  
2010 ◽  
Author(s):  
HongYu Yu
Keyword(s):  
Threshold Voltage ◽  
Lanthanum Oxide ◽  
Cmos Technology ◽  
Gate Electrode ◽  
Metal Gate ◽  
Capping Layer ◽  
Low Threshold

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

Compatibility of HfxTayN metal gate electrode with HfOxNy gate dielectric for advanced CMOS technology

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2516-2521
Author(s):  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
B.S. Sahu ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Gate Electrode ◽  
Metal Gate

Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

2006 ◽  
Vol 917 ◽  
Author(s):  
Raghunath Singanamalla ◽  
Judit Lisoni ◽  
Isabelle Ferain ◽  
Olivier Richard ◽  
Laure Carbonell ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Cmos Technology ◽  
Flat Band ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

AbstractThe electrical and material characterization of Ti(C)N deposited by metal organic chemical vapor deposition (MOCVD) technique, as metal gate electrode for advanced CMOS technology is investigated. The effects of the plasma treatment, post anneal treatment and the thickness variation of the Ti(C)N film on the flat band voltage (VFB) and effective work function (WF) of the Poly-Si/Ti(C)N/SiO2 Poly-Si/Ti(C)N/SiO2 gate stack s are reported. We found that both the in-situ plasma treatment and post anneal treatment help in reducing the carbon content (organic) in the film making it more metallic compared to the as-deposited films. However, the post anneal treatment was found to be a better option for getting rid of hydrocarbons as compared to plasma treatment from the gate dielectric integrity point of view. The thickness variation of post annealed Ti(C)N film ranged from 2.5 nm to 10 nm lead to WF shift of upto ~350 mV for both Poly-Si/Ti(C)N/SiO2 and Poly-Si/Ti(C)N/HfO2 gate stacks.

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

2011 ◽  
Vol 9 (8) ◽  
pp. 082301-82304
Author(s):  
董赞 Zan Dong ◽  
王伟 Wei Wang ◽  
黄北举 Beiju Huang ◽  
张旭 Xu Zhang ◽  
关宁 Ning Guan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Light Emitting Diode ◽  
Cmos Technology ◽  
Light Emitting ◽  
Low Threshold ◽  
Silicon Based

Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode

2006 ◽  
Vol 45 (8A) ◽  
pp. 6225-6230 ◽  
Author(s):  
Masaru Kadoshima ◽  
Toshihide Nabatame ◽  
Kunihiko Iwamoto ◽  
Nobuyuki Mise ◽  
Hiroyuki Ota ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Low Threshold
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