Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

2011 ◽  
Vol 9 (8) ◽  
pp. 082301-82304
Author(s):  
董赞 Zan Dong ◽  
王伟 Wei Wang ◽  
黄北举 Beiju Huang ◽  
张旭 Xu Zhang ◽  
关宁 Ning Guan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Light Emitting Diode ◽  
Cmos Technology ◽  
Light Emitting ◽  
Low Threshold ◽  
Silicon Based

Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability

2015 ◽  
Vol 31 ◽  
pp. 604-610 ◽  
Author(s):  
Shih-Chieh Tseng ◽  
Chao-Wei Tang ◽  
Hsueh-Chuan Liao ◽  
Kuan-Ming Li ◽  
Hong-Tsu Young
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

Schottky barrier light emitting diode in standard CMOS technology

2011 ◽  
Author(s):  
Beiju Huang ◽  
Wei Wang ◽  
Zan Dong ◽  
Zanyun Zhang ◽  
Weilian Guo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Light Emitting Diode ◽  
Cmos Technology ◽  
Light Emitting

Silicon-based light emitting diode material studied under high pressure

2004 ◽  
Vol 241 (14) ◽  
pp. 3387-3390 ◽  
Author(s):  
A. D. Prins ◽  
Y. Ishibashi ◽  
S. Sasahara ◽  
J. Nakahara ◽  
M. A. Lourenco ◽  
...  
Keyword(s):  
High Pressure ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

ChemInform Abstract: An Efficient Room-Temperature Silicon-Based Light-Emitting Diode.

ChemInform ◽  
2010 ◽  
Vol 32 (25) ◽  
pp. no-no
Author(s):  
Wai Lek Ng ◽  
M. A. Lourenco ◽  
R. M. Gwilliam ◽  
S. Ledain ◽  
G. Shao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

A Novel Voltage-Programmed Pixel Circuit with Poly-Si TFTs for AMOLED Displays

2018 ◽  
Vol 27 (14) ◽  
pp. 1850221
Author(s):  
Zunkai Huang ◽  
Li Tian ◽  
Hui Wang ◽  
Songlin Feng
Keyword(s):  
Threshold Voltage ◽  
Light Emitting Diode ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Electrical Stress ◽  
Organic Light ◽  
Pixel Circuit ◽  
Display Performance

In this paper, we propose a novel voltage-programmed pixel circuit with polysilicon thin–flim transistors (poly-Si TFTs) for active matrix organic light-emitting diode (AMOLED) displays, which consists of one programming transistor, one driving transistor, four switching transistors and two storage capacitors, respectively. Specifically, the proposed pixel circuit is able to not only efficiently compensate for the threshold variations of TFTs, but also largely suppresses the electrical degradations of the devices caused by the long-term electrical stress. Moreover, the mobility variation of the driving transistor can be compensated as well. The simulation has been performed by HSPICE, and results indicate that the average values of nonuniformities are, respectively, 7.3% as the threshold-voltage varies by [Formula: see text][Formula: see text]V and 2.1%, as the mobility of the driving transistor varies by [Formula: see text]%, both of which are much lower than that of the conventional two-transistor and one-capacitor (2T1C) pixel. Furthermore, since the OLED is reverse-biased during the nonemission phases, the lifetime of OLED will be extended naturally. As a consequence, the proposed pixel circuit can substantially improve the display performance.

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