High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology

2006 ◽  
Author(s):  
S. Yamaguchi ◽  
K. Tai ◽  
T. Hirano ◽  
T. Ando ◽  
S. Hiyama ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
High Mobility ◽  
Cmos Technology ◽  
Metal Gate ◽  
Low Threshold ◽  
Dual Metal

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

High performance FDSOI CMOS technology with metal gate and high-k

2005 ◽  
Author(s):  
B. Doris ◽  
Y.H. Kim ◽  
B.P. Linder ◽  
M. Steen ◽  
V. Narayanan ◽  
...  
Keyword(s):  
High Performance ◽  
Cmos Technology ◽  
Metal Gate ◽  
High K

Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

2009 ◽  
Vol 53 (3) ◽  
pp. 256-265 ◽  
Author(s):  
Rathnamala Rao ◽  
Guruprasad Katti ◽  
Dnyanesh S. Havaldar ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Metal Gate ◽  
Fully Depleted ◽  
Dual Metal ◽  
Threshold Voltage Model

Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf–Mo Binary Alloys

2005 ◽  
Vol 52 (6) ◽  
pp. 1172-1179 ◽  
Author(s):  
T.-L. Li ◽  
C.-H. Hu ◽  
W.-L. Ho ◽  
H.C.-H. Wang ◽  
C.-Y. Chang
Keyword(s):  
Work Function ◽  
Binary Alloys ◽  
Cmos Technology ◽  
Metal Gate ◽  
Dual Metal
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