scholarly journals Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

10.5772/38713 ◽  
2012 ◽  
Author(s):  
Caroline Moulet ◽  
Mark. S.
Keyword(s):  
Lattice Strain ◽  
Layer Transfer ◽  
Strain Measurements ◽  
Transfer Processes

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

Lattice strain measurements on sandstones under load using neutron diffraction

2000 ◽  
Vol 22 (11-12) ◽  
pp. 1587-1600 ◽  
Author(s):  
A. Frischbutter ◽  
D. Neov ◽  
Ch. Scheffzük ◽  
M. Vrána ◽  
K. Walther
Keyword(s):  
Neutron Diffraction ◽  
Lattice Strain ◽  
Strain Measurements

Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
J. L. Tandon ◽  
J. H. Madok ◽  
I. S. Leybovich ◽  
G. Bai
Keyword(s):  
Electron Concentration ◽  
Lattice Strain ◽  
Extended Defects ◽  
Strain Measurements ◽  
X Ray ◽  
Depth Profiles ◽  
Annealing Temperatures ◽  
Implantation Damage ◽  
Long Tails ◽  
Concentration Depth Profiles

ABSTRACTIn the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.

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