Embedded Power Modules – A new approach using Power Core and High Power PCB

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000906-000937 ◽  
Author(s):  
Lars Boettcher ◽  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Switching Frequency ◽  
Automotive Applications ◽  
New Approach ◽  
Power Semiconductors ◽  
Power Modules ◽  
Bond Wires ◽  
Embedded Power

Power electronics packaging applications has strong demands regarding reliability and cost. The fields of developments reach from low power converter modules, over single or multichip MOSFET or IGBT packages, up to high power applications, like needed e.g. for solar inverters and automotive applications. This paper will give an overview about these applications and a description of each ones demand. The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductance. Additionally bond wires result in a high stray inductance which limits the switching frequency. The embedding of chips using Printed Circuit Board (PCB) technology offers a solution for many of the problems in power packaging. This paper will show today's available power packages and power modules, realized in industrial production as well as in European research projects. All technologies which are used are based on PCB materials and processes. Chips are mounted to Cu foils, lead frames, high power PCBs or even ceramic substrates, embedded by vacuum lamination of laminate sheets and electrically connected by laser drilling and Cu plating. A new approach for embedded power modules will be presented in detail. In this project, different application fields are covered, ranging from 50 W over 500 W to 50kW power modules for different applications like single chip packages, over power control units for pedelec (Pedal Electric Cycle), to inverter modules for automotive applications. This approach will focus on a power core base structure for the embedded semiconductor, which is then connected to a high power PCB. The connection to the embedded die is realized by direct copper connection only. The technology principle will be described in detail. Frist manufactured demonstrators will be presented. The presented new approach for the realization of a power core structure offers new possibilities for the module manufacturing, avoiding soldering or Ag sintering of the power semiconductors and the handling of thick copper substrates during the embedding process.

Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000694-000719 ◽  
Author(s):  
Lars Böttcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
Eckart Hoene ◽  
A. Ostmann
Keyword(s):  
High Power ◽  
Cost Effective ◽  
Switching Frequency ◽  
Research Projects ◽  
Power Module ◽  
Large Power ◽  
Power Semiconductors ◽  
Power Modules ◽  
3D Assembly ◽  
Bond Wires

The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductances. Power chip packages have to carry semiconductors with increasing current densities. Conventional wire bonds are limiting their performance. Today's power modules are based on DCB (Direct Copper bonded) ceramic substrates. IGBT switches are mounted onto the ceramic and their top side contacts are connected by thick Al wires. This allows one wiring layer only and makes an integration of driver chips very difficult. Additionally bond wires result in a high stray inductance which limits the switching frequency. Especially for the use of ultra-fast switching semiconductors, like SiC and GaN, it is very difficult to realize low inductive packages. The embedding of chips offers a solution for many of the problems in power chip packages and power modules. While chip embedding was an academic exercise a decade ago, it is now an industrial solution. A huge advantage of packaging using PCB technology is the cost-effective processing on large panel. Furthermore embedded packages and modules allow either double-side cooling or 3D assembly of components like capacitors, gate drivers or controllers. The advanced results of research projects will be discussed in the paper. An ultra-low inductance power module with SiC switches at 20 A / 600 V has been realized and characterized. The DC link inductance of the module was 0,8 nH only. These results sparked a huge interest in currently starting follow up projects creating package for fast switches. In a further project power modules for automotive power inverters for motor control are under development. As a project demonstrator, a 10 kW module with IGBTs and diodes at 400 V / 500 A, was manufactured. This demonstrator is based on high power PCB technology and was fully characterized; the results will be presented in detail. Recently started research projects will face the challenges of MW solar inverters at 1000 A and 1000 V, using SiC semiconductors as switches. First concepts will be presented as an outlook.

Embedded Die Packages and Modules for Power Electronics Applications

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001918-001947 ◽  
Author(s):  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
Power Efficiency ◽  
High Reliability ◽  
Heat Removal ◽  
Testing Temperature ◽  
Temperature Cycling ◽  
Switching Frequency ◽  
Large Area ◽  
Power Modules ◽  
Embedded Power

Packages and modules with embedded semiconductor dies are of interest for various application fields and power classes. First packages in the lower power range are available in volume production since almost six years. Recent developments focus on medium and higher power applications raging over 500W into the kW range. Different approaches are available to realize such packages and modules. This paper will give an overview and detailed description of the latest approaches for such embedded die structures. In common of all of these approaches, is the use of laminate based die embedding, which uses standard PCB manufacturing technologies. Main differences are the used base substrate, which can still be a ceramic (DBC), Cu leadframe or high current substrate. Examples for the different methods will be given. As the main part, this paper will describe concepts, which enable significant smaller form-factor of power electronics modules, thereby allowing for lower price, high reliability, capability of direct mounting on e.g. a motor so as to form one unit with the motor housing, wide switching frequency range (for large application field) and high power efficiency. The innovative character of this packaging concept is the idea to embed the power drive components (IGBTs, MOSFETs, diode) as thinned chips into epoxy-resin layer built-up and to realize large-area interconnections on both sides by direct copper plating the dies to form a conductor structure with lowest possible electrical impedance and to achieve an optimum heat removal. In this way a thin core is formed on a large panel format which is called Embedded Power Core. The paper will specifically highlight the first results on manufacturing an embedded power discrete package as an example of an embedded power core containing a thin rectifier diode. For module realization, the power cores are interconnected to insulated metal substrates (IMS) by the use of Ag sintering interconnection technologies for the final manufacturing of Power modules. The paper will elaborate on the sintering process for Power Core/IMS interconnections, the microscopically features of the sintered interfaces, and the lateral filling of the sintering gap with epoxy prepregs. Firstly, 500W power modules were manufactured using this approach. Reliability testing results, solder reflow testing, temperature cycling test and active power cycling, will be discussed in detail.

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Die-Attach Bonding with Etched Micro Brass Metal Pigment Flakes for High-Power Electronics Packaging

2021 ◽  
Author(s):  
Sri Krishna Bhogaraju ◽  
Hiren R. Kotadia ◽  
Fosca Conti ◽  
Armin Mauser ◽  
Thomas Rubenbauer ◽  
...  
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Die Attach

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

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