Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000694-000719 ◽  
Author(s):  
Lars Böttcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
Eckart Hoene ◽  
A. Ostmann
Keyword(s):  
High Power ◽  
Cost Effective ◽  
Switching Frequency ◽  
Research Projects ◽  
Power Module ◽  
Large Power ◽  
Power Semiconductors ◽  
Power Modules ◽  
3D Assembly ◽  
Bond Wires

The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductances. Power chip packages have to carry semiconductors with increasing current densities. Conventional wire bonds are limiting their performance. Today's power modules are based on DCB (Direct Copper bonded) ceramic substrates. IGBT switches are mounted onto the ceramic and their top side contacts are connected by thick Al wires. This allows one wiring layer only and makes an integration of driver chips very difficult. Additionally bond wires result in a high stray inductance which limits the switching frequency. Especially for the use of ultra-fast switching semiconductors, like SiC and GaN, it is very difficult to realize low inductive packages. The embedding of chips offers a solution for many of the problems in power chip packages and power modules. While chip embedding was an academic exercise a decade ago, it is now an industrial solution. A huge advantage of packaging using PCB technology is the cost-effective processing on large panel. Furthermore embedded packages and modules allow either double-side cooling or 3D assembly of components like capacitors, gate drivers or controllers. The advanced results of research projects will be discussed in the paper. An ultra-low inductance power module with SiC switches at 20 A / 600 V has been realized and characterized. The DC link inductance of the module was 0,8 nH only. These results sparked a huge interest in currently starting follow up projects creating package for fast switches. In a further project power modules for automotive power inverters for motor control are under development. As a project demonstrator, a 10 kW module with IGBTs and diodes at 400 V / 500 A, was manufactured. This demonstrator is based on high power PCB technology and was fully characterized; the results will be presented in detail. Recently started research projects will face the challenges of MW solar inverters at 1000 A and 1000 V, using SiC semiconductors as switches. First concepts will be presented as an outlook.

Embedded Power Modules – A new approach using Power Core and High Power PCB

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000906-000937 ◽  
Author(s):  
Lars Boettcher ◽  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Switching Frequency ◽  
Automotive Applications ◽  
New Approach ◽  
Power Semiconductors ◽  
Power Modules ◽  
Bond Wires ◽  
Embedded Power

Power electronics packaging applications has strong demands regarding reliability and cost. The fields of developments reach from low power converter modules, over single or multichip MOSFET or IGBT packages, up to high power applications, like needed e.g. for solar inverters and automotive applications. This paper will give an overview about these applications and a description of each ones demand. The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductance. Additionally bond wires result in a high stray inductance which limits the switching frequency. The embedding of chips using Printed Circuit Board (PCB) technology offers a solution for many of the problems in power packaging. This paper will show today's available power packages and power modules, realized in industrial production as well as in European research projects. All technologies which are used are based on PCB materials and processes. Chips are mounted to Cu foils, lead frames, high power PCBs or even ceramic substrates, embedded by vacuum lamination of laminate sheets and electrically connected by laser drilling and Cu plating. A new approach for embedded power modules will be presented in detail. In this project, different application fields are covered, ranging from 50 W over 500 W to 50kW power modules for different applications like single chip packages, over power control units for pedelec (Pedal Electric Cycle), to inverter modules for automotive applications. This approach will focus on a power core base structure for the embedded semiconductor, which is then connected to a high power PCB. The connection to the embedded die is realized by direct copper connection only. The technology principle will be described in detail. Frist manufactured demonstrators will be presented. The presented new approach for the realization of a power core structure offers new possibilities for the module manufacturing, avoiding soldering or Ag sintering of the power semiconductors and the handling of thick copper substrates during the embedding process.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

scholarly journals Optimal Design of an X-Band, Fully-Coaxial, Easily-Tunable Broadband Power Equalizer for a Microwave Power Module

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 829
Author(s):  
Fabio Paolo Lo Gerfo ◽  
Patrizia Livreri
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Sensitivity Analyses ◽  
Operating Frequency ◽  
Power Module ◽  
Insertion Depth ◽  
Large Power ◽  
Coaxial Cavity ◽  
X Band ◽  
Power Stage

A microwave power module (MPM), which is a hybrid combination of a solid-state power amplifier (SSPA) as a driver and a traveling-wave tube amplifier (TWT) as the final high power stage, is a high-power device largely used for radar applications. A gain equalizer is often required to flatten the TWT output power gain owing to its big gain fluctuations over the operating frequency range. In this paper, the design of an X-band, fully-coaxial, easily-tunable broadband power equalizer for an MPM is presented. The structure is composed of a coaxial waveguide as the main transmission line and a coaxial cavity loaded with absorbing material as a resonant unit. Sensitivity analyses of the attenuation amplitude and resonant frequency of the equalizer in terms of coaxial cavity length, thickness of the absorbing disc, and insertion depth of the probe were carried out. The measured results were in good agreement with the simulated ones, showing that the equalization curve met the requirements well and proved that this optimal structure has the advantages of a large power capacity, a wide operating frequency band, is easily tunable, and good transmission performance.

scholarly journals Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module

2021 ◽  
Vol 18 (3) ◽  
pp. 123-136
Author(s):  
Tzu-Hsuan Cheng ◽  
Kenji Nishiguchi ◽  
Yoshi Fukawa ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya ◽  
...  
Keyword(s):  
Epoxy Resin ◽  
High Power ◽  
High Performance ◽  
Mechanical Performance ◽  
Resin Composite ◽  
Wide Band ◽  
Cost Effective ◽  
Power Module ◽  
Wide Band Gap ◽  
Epoxy Resin Composite

Abstract Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packaging solution is necessary. This study proposes a Double-Side Cooled (DSC) 1.2 kV half-bridge power module having dual epoxy resin insulated metal substrate (eIMS) for solving convectional power module challenges and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) Direct Bonded Copper (DBC) DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 mm) epoxy resin composite dielectric working as the IMS insulation layer. This novel organic dielectric can withstand high voltage (5 kVAC @ 120 μm) and has a Glass Transition Temperature (Tg) of 300°C, which is suitable for high-power applications. In the thermal-mechanical modeling, the organic DSC power module can pass the thermal cycling test over 1,000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this article not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.

scholarly journals Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3802 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Kuang Sheng
Keyword(s):  
High Power ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Power Modules ◽  
Voltage Plateau ◽  
Source Voltage ◽  
Bus Voltage

The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000247-000251
Author(s):  
Liqi Zhang ◽  
Suxuan Guo ◽  
Pengkun Liu ◽  
Alex Q. Huang
Keyword(s):  
Comparative Evaluation ◽  
Switching Frequency ◽  
Common Source ◽  
Power Module ◽  
Switching Speed ◽  
Switching Performance ◽  
Switching Losses ◽  
Power Modules ◽  
Gate Driver ◽  
The Common

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element

2017 ◽  
Vol 897 ◽  
pp. 689-692
Author(s):  
Stefan Matlok ◽  
Tobias Erlbacher ◽  
Florian Krach ◽  
Bernd Eckardt
Keyword(s):  
Development Effort ◽  
Power Losses ◽  
Power Module ◽  
Large Power ◽  
Chip Area ◽  
Switching Performance ◽  
Fast Switching ◽  
Power Modules ◽  
Power Switches ◽  
Recent Developments

Large power modules include several parallel mounted chips per switch to raise active area and current. By the electro-mechanical connection interface, the resulting large parasitic inductance is a huge problem especially for very fast switching SiC devices. This challenge is handled by many approaches, but these recent developments require additional development effort along all aspects of the power module, e.g. smart DBC layout, low inductive top side metallization, special terminal designs or additional pins. In this paper we demonstrate an approach to enable excellent switching performance with con-ventional power module technologies: By using a recently developed monolithic silicon RC (Si-RC) element to decouple the bus bar, this problem can be solved in a very efficient way. The Si-RC element is assembled directly adjacent to the power switches on the DBC. This allows a significant reduction of the SiC chip area by minimizing the power losses caused by the switching transients from the parasitic DC-link and module inductances.

Based Flying Capacitor Converter Wind Power Generator System

2010 ◽  
Vol 143-144 ◽  
pp. 1401-1405
Author(s):  
Hong Yan Xu
Keyword(s):  
Power System ◽  
Power Electronics ◽  
Wind Power ◽  
High Power ◽  
Carrier Phase ◽  
Reactive Power ◽  
Power Converter ◽  
Switching Frequency ◽  
Large Power ◽  
Wind Power System

Direct drive wind power system need full-scale high power converter, such as flying capacitor multilevel converter. On the realization of high power electronic equipment, an important problem is that the working frequency of high power devices is too low to apply excellent modulated technique such as PWM. In large-power equipment, the switching frequency of power electronics devices is such low that good control performance can't be obtained with a single converter. In order to overcome this problem, Carrier phase-shifted SPWM technique (CPS-SPWM) has been researched. Reactive power compensation and harmonic reduction are two relevant research problems that exist in wind power system. With the advancement of modern power electronics technology in both circuits and devices, new and better solutions are being proposed and applied to solve these two problems. To compensate reactive power, a flying capacitor type multilevel inverters with a Carrier Phase-Shifted SPWM(CPS-SPWM) switching scheme is proposed. All this verified by simulation and experiment.

scholarly journals Cell/Module Integration Technology with Wire-Embedded EVA Sheet

2021 ◽  
Vol 11 (9) ◽  
pp. 4170
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Donggun Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Power ◽  
Short Circuit ◽  
Optical Loss ◽  
Manufacturing Cost ◽  
Power Module ◽  
Manufacturing Method ◽  
Front Electrode ◽  
The Wire

Silicon wafers are crucial for determining the price of solar cell modules. To reduce the manufacturing cost of photovoltaic devices, the thicknesses of wafers are reduced. However, the conventional module manufacturing method using the tabbing process has a disadvantage in that the cell is damaged because of the high temperature and pressure of the soldering process, which is complicated, thus increasing the process cost. Consequently, when the wafer is thinned, the breakage rate increases during the module process, resulting in a lower yield; further, the module performance decreases owing to cracks and thermal stress. To solve this problem, a module manufacturing method is proposed in which cells and wires are bonded through the lamination process. This method minimizes the thermal damage and mechanical stress applied to solar cells during the tabbing process, thereby manufacturing high-power modules. When adopting this method, the front electrode should be customized because it requires busbarless solar cells different from the existing busbar solar cells. Accordingly, the front electrode was designed using various simulation programs such as Griddler 2.5 and MathCAD, and the effect of the diameter and number of wires in contact with the front finger line of the solar cell on the module characteristics was analyzed. Consequently, the efficiency of the module manufactured with 12 wires and a wire diameter of 0.36 mm exhibited the highest efficiency at 20.28%. This is because even if the optical loss increases with the diameter of the wire, the series resistance considerably decreases rather than the loss of the short-circuit current, thereby improving the fill factor. The characteristics of the wire-embedded ethylene vinyl acetate (EVA) sheet module were confirmed to be better than those of the five busbar tabbing modules manufactured by the tabbing process; further, a high-power module that sufficiently compensated for the disadvantages of the tabbing module was manufactured.

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