scholarly journals Strain engineering of electrical conductivity in epitaxial thin Ba0.7Sr0.3TiO3 film heterostructures

2016 ◽  
Vol 56 (3) ◽  
pp. 173-181 ◽  
Author(s):  
Rūta Mackevičiūtė ◽  
Šarūnas Bagdzevičius ◽  
Maksim Ivanov ◽  
Barbara Fraygola ◽  
Robertas Grigalaitis ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Strontium Titanate ◽  
Real Life ◽  
Hole Mobility ◽  
Impedance Analysis ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Electron Hole ◽  
Epitaxial Strain ◽  
Strain Dependent

Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications (i. e. memristors), but the mechanism is not fully understood. Here we report on the investigation of epitaxial barium strontium titanate thin films deposited on strontium titanate single crystal substrates (Ba0.7Sr0.3TiO3/SrRuO3//SrTiO3 heterostructures) with a controlled epitaxial strain. The impedance analysis allowed us to propose a model, which explains changes in the temperature dependence of the conductivity based on the strain-dependent anisotropic change of electron/hole mobility.

scholarly journals Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr1–y VO3 ultrathin films based on absorption measurements at the V L 2- and L 3-edges

2019 ◽  
Vol 26 (5) ◽  
pp. 1687-1693 ◽  
Author(s):  
Meng Wu ◽  
Si-Zhao Huang ◽  
Hui Zeng ◽  
Gertjan Koster ◽  
Yu-Yang Huang ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electronic Properties ◽  
Ultrathin Films ◽  
Valence State ◽  
Epitaxial Strain ◽  
Asymmetric Response ◽  
Strained Films ◽  
X Ray Absorption ◽  
Strain Dependent ◽  
Absorption Measurements

The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr1–y VO3 films of different thicknesses capped with 4 u.c. (unit cell) SrTiO3 layers, showing the coexistence of V4+ and V5+ in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr1–y VO3 ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr1–y VO3 thin films are metallic and exhibit a thickness-driven metal–insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr1–y VO3 films will be beneficial for functional oxide electronic devices.

Twisted oxide lateral homostructures with conjunction tunability

2021 ◽  
Author(s):  
Jan-Chi Yang ◽  
Ping-Chun Wu ◽  
Chia-Chun Wei ◽  
Qilan Zhong ◽  
Sheng-Zhu Ho ◽  
...  
Keyword(s):  
Wide Spectrum ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Modern Technology ◽  
Specific Substrate ◽  
Lattice Structures ◽  
High Quality ◽  
The Past ◽  
Sharp Interfaces ◽  
Selection Of

Abstract Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structures, regularity and crystalline orientation are determined once a specific substrate is chosen. In this work, we reveal the growth of twisted oxide lateral homostructures with multiple conjunction degree of freedom. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems. Our results establish an efficient pathway towards twisted lateral homostructures, allowing epitaxial films to be arbitrarily tailored at designated positions with unbounded in-plane conjunction tunability.

scholarly journals NaFePO4 Cathode Prepared from The Caustic Fusion of A Mix Ilmenite-Hematite Followed by Cyclic Voltammetry for Na Insertion

2020 ◽  
Vol 9 (2) ◽  
pp. 142-152
Author(s):  
Fitria Rahmawati ◽  
◽  
Dwi Aman Nur Romadhona ◽  
Syulfi Faiz ◽  
◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Cyclic Voltammetry ◽  
Secondary Phase ◽  
Impedance Analysis ◽  
Fusion Method ◽  
Peak Point ◽  
Fe Content ◽  
Scan Rate ◽  
Hematite Fe2o3 ◽  
Resistance Value

Research to prepare NaFePO4 cathode material from iron sand was conducted. The iron sand consists of ilmenite FeTiO3 and hematite Fe2O3. A caustic fusion method used to precipitate iron as Fe(OH)3 and it increased Fe content up to 94.71 %. Phosphate precipitation successfully produced trigonal FePO4 and monoclinic FePO4 comply with ICSD#412736 and ICSD#281079. The prepared-FePO4 was then used as a precursor for Na insertion by applying cyclic voltammetry mode within 2.0 – 4.0 V with 0.05 mVs-1 of the scan rate. It produced orthorhombic olivine NaFePO4 and a secondary phase of orthorhombic Na0.7FePO4. Impedance analysis at 20 Hz – 5 MHz found that the material provided a semicircle at 100 Hz peak point, indicating electrode-bulk interface with a resistance value of 1735W, comparable to the electrical conductivity of 5.36 x 10-6 Scm-1. Even though the conductivity value is quite lower than NaFePO4 prepared from a commercial FePO4 that has been conducted in our previous research, however the electrical conductivity still reliable for cathode.

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

2009 ◽  
Vol 106 (8) ◽  
pp. 083704 ◽  
Author(s):  
Y. Zhang ◽  
M. V. Fischetti ◽  
B. Sorée ◽  
W. Magnus ◽  
M. Heyns ◽  
...  
Keyword(s):  
Physical Modeling ◽  
Hole Mobility ◽  
Strain Dependent

scholarly journals Modeling of Beta Conductivity in Tritiated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Radioactive Decay ◽  
Dangling Bonds ◽  
Electron Hole ◽  
Beta Particles ◽  
Amorphous Silicon Film ◽  
Recombination Centers

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21062-21068 ◽  
Author(s):  
Xiaolong Zhang ◽  
Wipakorn Jevasuwan ◽  
Ken C. Pradel ◽  
Thiyagu Subramani ◽  
Toshiaki Takei ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Core Shell ◽  
High Electron ◽  
Electron Hole ◽  
Vapor Liquid Solid ◽  
Selective Doping ◽  
Sharp Interfaces ◽  
Growth Methods ◽  
Vapor Liquid Solid Growth ◽  
Shell Nanowires

p-Si/i-Ge core–shell and p-Si/i-Ge/p-Si core–double shell nanowires are fabricated using CVD with vapor–liquid–solid growth methods. Selective doping and sharp interfaces between the Si core and the Ge shell are achieved, which can provide a feasible design for realizing high electron (hole) mobility transistors.

Strain engineering of magnetic and orbital order in perovskite LuMnO3 epitaxial films

2019 ◽  
Vol 100 (17) ◽  
Author(s):  
Chao Ji ◽  
Yancheng Wang ◽  
Bixiang Guo ◽  
Xiaofan Shen ◽  
Qunyong Luo ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Epitaxial Films ◽  
Orbital Order
Sign in / Sign up

Export Citation Format

Share Document