Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires
Keyword(s):
p-Si/i-Ge core–shell and p-Si/i-Ge/p-Si core–double shell nanowires are fabricated using CVD with vapor–liquid–solid growth methods. Selective doping and sharp interfaces between the Si core and the Ge shell are achieved, which can provide a feasible design for realizing high electron (hole) mobility transistors.
2010 ◽
Vol 10
(12)
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pp. 8375-8379
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2018 ◽
Vol 749
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pp. 217-220
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2015 ◽
Vol 358
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pp. 449-456
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2011 ◽
Vol 314
(1)
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pp. 34-38
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1995 ◽
Vol 53
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pp. 392-393