Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

2009 ◽  
Vol 106 (8) ◽  
pp. 083704 ◽  
Author(s):  
Y. Zhang ◽  
M. V. Fischetti ◽  
B. Sorée ◽  
W. Magnus ◽  
M. Heyns ◽  
...  
Keyword(s):  
Physical Modeling ◽  
Hole Mobility ◽  
Strain Dependent

scholarly journals Strain engineering of electrical conductivity in epitaxial thin Ba0.7Sr0.3TiO3 film heterostructures

2016 ◽  
Vol 56 (3) ◽  
pp. 173-181 ◽  
Author(s):  
Rūta Mackevičiūtė ◽  
Šarūnas Bagdzevičius ◽  
Maksim Ivanov ◽  
Barbara Fraygola ◽  
Robertas Grigalaitis ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Strontium Titanate ◽  
Real Life ◽  
Hole Mobility ◽  
Impedance Analysis ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Electron Hole ◽  
Epitaxial Strain ◽  
Strain Dependent

Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications (i. e. memristors), but the mechanism is not fully understood. Here we report on the investigation of epitaxial barium strontium titanate thin films deposited on strontium titanate single crystal substrates (Ba0.7Sr0.3TiO3/SrRuO3//SrTiO3 heterostructures) with a controlled epitaxial strain. The impedance analysis allowed us to propose a model, which explains changes in the temperature dependence of the conductivity based on the strain-dependent anisotropic change of electron/hole mobility.

scholarly journals The Quantum Calculation for Valence Band Structure of Strained Zinc-blende GaN Using Six-Band Based k·p Method

2021 ◽  
Vol 2065 (1) ◽  
pp. 012002
Author(s):  
Yaqun Liu ◽  
Everett X. Wang ◽  
Gary Zhang ◽  
Xiyue Li
Keyword(s):  
Valence Band ◽  
Quantum Confinement Effect ◽  
Hole Mobility ◽  
Uniaxial Stress ◽  
Carrier Distribution ◽  
Group Iii ◽  
Stress Effects ◽  
Zinc Blende ◽  
Group Iii Nitride ◽  
Strain Dependent

Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed in this paper. The calculations are based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures are given for the quantized valence subband structure under biaxial and uniaxial stress in (001) surface along the [110] direction accounting the quantum confinement effect. The warping of the energy profile results in carrier distribution change. This research will be beneficial for improving the hole mobility and the selective of optimum stress for group-III nitride semiconductor based devices.

Physical modeling of hole mobility in silicon inversion layers under uniaxial stress

2007 ◽  
Vol 6 (1-3) ◽  
pp. 63-65 ◽  
Author(s):  
Ji Zhao ◽  
Yaohua Tan ◽  
Jianping Zou ◽  
Zhiping Yu
Keyword(s):  
Physical Modeling ◽  
Hole Mobility ◽  
Uniaxial Stress

Mouse paternal-RNAs initiate pattern of metabolic disorders in a strain dependent manner

2016 ◽  
Author(s):  
Guzide Satir Basaran ◽  
Yagut Akbarova ◽  
Kezban Korkmaz ◽  
Kursad Unluhizarci ◽  
Francois Cuzin ◽  
...  
Keyword(s):  
Metabolic Disorders ◽  
Dependent Manner ◽  
Strain Dependent

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

Understanding of the Fluid Flow Mechanism in Porous Media of EOR by ASP Flooding from Physical Modeling

2007 ◽  
Author(s):  
Jialu Wang ◽  
Shiyi Yuan ◽  
Pingping Shen ◽  
Taixian Zhong ◽  
Xu Jia
Keyword(s):  
Porous Media ◽  
Fluid Flow ◽  
Physical Modeling ◽  
Flow Mechanism ◽  
Asp Flooding

Physical modeling and deformation simulation of flexible cable under the plane constraint

2017 ◽  
Vol 50 (4-6) ◽  
pp. 471-484
Author(s):  
Hongwang DU ◽  
Wei XIONG ◽  
Haitao WANG ◽  
Zuwen WANG
Keyword(s):  
Physical Modeling ◽  
Flexible Cable ◽  
Deformation Simulation
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