Strain engineering of magnetic and orbital order in perovskite LuMnO3 epitaxial films

2019 ◽  
Vol 100 (17) ◽  
Author(s):  
Chao Ji ◽  
Yancheng Wang ◽  
Bixiang Guo ◽  
Xiaofan Shen ◽  
Qunyong Luo ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Epitaxial Films ◽  
Orbital Order

Twisted oxide lateral homostructures with conjunction tunability

2021 ◽  
Author(s):  
Jan-Chi Yang ◽  
Ping-Chun Wu ◽  
Chia-Chun Wei ◽  
Qilan Zhong ◽  
Sheng-Zhu Ho ◽  
...  
Keyword(s):  
Wide Spectrum ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Modern Technology ◽  
Specific Substrate ◽  
Lattice Structures ◽  
High Quality ◽  
The Past ◽  
Sharp Interfaces ◽  
Selection Of

Abstract Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structures, regularity and crystalline orientation are determined once a specific substrate is chosen. In this work, we reveal the growth of twisted oxide lateral homostructures with multiple conjunction degree of freedom. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems. Our results establish an efficient pathway towards twisted lateral homostructures, allowing epitaxial films to be arbitrarily tailored at designated positions with unbounded in-plane conjunction tunability.

scholarly journals Strain engineering of electrical conductivity in epitaxial thin Ba0.7Sr0.3TiO3 film heterostructures

2016 ◽  
Vol 56 (3) ◽  
pp. 173-181 ◽  
Author(s):  
Rūta Mackevičiūtė ◽  
Šarūnas Bagdzevičius ◽  
Maksim Ivanov ◽  
Barbara Fraygola ◽  
Robertas Grigalaitis ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Strontium Titanate ◽  
Real Life ◽  
Hole Mobility ◽  
Impedance Analysis ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Electron Hole ◽  
Epitaxial Strain ◽  
Strain Dependent

Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications (i. e. memristors), but the mechanism is not fully understood. Here we report on the investigation of epitaxial barium strontium titanate thin films deposited on strontium titanate single crystal substrates (Ba0.7Sr0.3TiO3/SrRuO3//SrTiO3 heterostructures) with a controlled epitaxial strain. The impedance analysis allowed us to propose a model, which explains changes in the temperature dependence of the conductivity based on the strain-dependent anisotropic change of electron/hole mobility.

scholarly journals Strain Engineering of Magnetic Anisotropy in Epitaxial Films of Cobalt Ferrite

2021 ◽  
pp. 2101034
Author(s):  
Hiroshige Onoda ◽  
Hiroaki Sukegawa ◽  
Jun‐Ichiro Inoue ◽  
Hideto Yanagihara
Keyword(s):  
Magnetic Anisotropy ◽  
Cobalt Ferrite ◽  
Strain Engineering ◽  
Epitaxial Films

Strain engineering on the metal-insulator transition of VO2/TiO2 epitaxial films dependent on the strain state of vanadium dimers

2019 ◽  
Vol 115 (25) ◽  
pp. 251605 ◽  
Author(s):  
Bin Hong ◽  
Yuanjun Yang ◽  
Kai Hu ◽  
Yongqi Dong ◽  
Jingtian Zhou ◽  
...  
Keyword(s):  
Strain State ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Strain Engineering of Magnetic Anisotropy in Epitaxial Films of Cobalt Ferrite (Adv. Mater. Interfaces 23/2021)

2021 ◽  
Vol 8 (23) ◽  
pp. 2170135
Author(s):  
Hiroshige Onoda ◽  
Hiroaki Sukegawa ◽  
Jun‐Ichiro Inoue ◽  
Hideto Yanagihara
Keyword(s):  
Magnetic Anisotropy ◽  
Cobalt Ferrite ◽  
Strain Engineering ◽  
Epitaxial Films

Enhancement of piezoelectricity in spin-coated Bi1/2Na1/2TiO3-BaTiO3 epitaxial films by strain-engineering

2021 ◽  
Author(s):  
Yu Huang ◽  
Zhen Zhou ◽  
Liang Shu ◽  
Yue-Yu-Shan Cheng ◽  
Jin Luo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Crystal Structures ◽  
Large Strain ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Ferroelectric Films

Ferroelectric films can sustain large strain induced by substrate constraints, which may additionally modulate their crystal structures and electrical properties. This study revealed the strain engineering effect on piezoelectricity of...

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

In-depth Analysis of the Impurities in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
A. P. Kovarsky ◽  
V. S. Strykanov
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dynamic Range ◽  
Detection Limits ◽  
Background Level ◽  
Epitaxial Films ◽  
Depth Analysis ◽  
Lower Detection ◽  
Minimum Detection Level ◽  
Ion Yields ◽  
Secondary Ion

GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry (SIMS). Standard implanted samples were used to determine the appropriate analytical conditions for analysis of impurities. The dose and energy of implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen so the maximum impurity concentration was not more than 1020 atoms/cm3. The optimum analysis conditions were ascertained from the standards for each element, and the detection limits were deduced from the background levels of the implantation profiles. We demonstate that lower detection limits of 1015 atoms/cm3 with a dynamic range 103 − 105 are possible. Zn and Cd have low ion yields, so the minimum detection level for these elements is the background level of the detector. The detection limits of the other elements are determined by the contamination of an initial GaN matrix.

Sign in / Sign up

Export Citation Format

Share Document