scholarly journals A Planar Millimeter-Wave Resonator-Array to Sense the Permittivity of COP Film with the 5G Handset Back-Cover

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4316
Author(s):  
Yejune Seo ◽  
Changhyeong Lee ◽  
Inyeol Moon ◽  
Koichro Ota ◽  
Ryomei Omote ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Mobile Phones ◽  
Surface Film ◽  
Impedance Matching ◽  
Electrical Characterization ◽  
Test Methods ◽  
Back Cover ◽  
Wave Resonator ◽  
Antenna Configuration

In this paper, a new sensor is developed to estimate the dielectric constant of Cyclo Olefin Polymer (COP) film utilizable for 5G mobile phones’ multi-layered back−cover. It is featured by the electrical characterization of the thin layer of the COP film at 28 GHz as the material under test (MUT) directly contacting the planar probe (which is an array of resonating patches) and a new meta-surface as metal patterned on the COP film inserted between the planar probe and the 5G multi-layered back−cover for enhanced physical interpretation of the data by way of impedance matching. In this approach to delving into the material, a thin and small meta-surface film with an area of 25.65 × 21.06 mm2 and a thickness of 55 μm is examined for applications to 5G mobile 28 GHz-frequency communication on the basis of the below −10 dB-impedance matching for the 1-by-4 array sensor. Along with this, the real and commercial handset back−cover is brought to the test. The proposed method presents the advantages of geometrical adequacy to the realistic 5G handset antenna configuration, the idea of impedance-matching via meta-materials, and the suitability of characterizing the film-type structure as compared to the open-ended coaxial waveguide, waveguide-to-waveguide and TX horn-to-RX horn free-space test methods.

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Electrical Characterization of Sol-Gel Derived PZT Films

1991 ◽  
Vol 243 ◽  
Author(s):  
G. Teowee ◽  
J.M. Boulton ◽  
S.C. Lee ◽  
D.R. Uhlmann
Keyword(s):  
Dielectric Constant ◽  
Low Temperatures ◽  
Lead Acetate ◽  
Single Phase ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Electrical Characterization ◽  
Aging Rate ◽  
Pzt Films

AbstractSol-gel derived PZT films were successfully prepared from precursor solutions based on lead acetate and Zr/Ti alkoxides. A pyrochlore phase was observed in films fired at low temperatures, while single-phase perovskite films were obtained at temperatures above 725C. The dielectric constant increased to above 1000 when there was a higher proportion of perovskite than pyrochlore. The films were essentially fatigue-free up to 108 cycles and exhibited a low aging rate of 5.7% / decade-sec.

Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices

2013 ◽  
Vol 740-742 ◽  
pp. 777-780 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Giuseppe Greco ◽  
L. Swanson ◽  
G. Fisichella ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Nickel Oxide ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Lower Dielectric Constant ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nio Films

This paper reports on a structural and electrical analysis of nickel oxide (NiO) films grown both on AlGaN/GaN heterostructures and on 4H-SiC epilayers. The films were grown by metal organic chemical vapor deposition (MOCVD). The structural analysis showed epitaxially oriented films over the hexagonal substrates. The electrical characterization of simple devices onto AlGaN/GaN heterostructures enabled to demonstrate a dielectric constant of 11.7 and a reduction of the leakage current in insulated gate structures. On the other hand, epitaxial NiO films grown onto 4H-SiC epilayers exhibited the presence of an interfacial SiO2layer and twinned NiO grains, and a lower dielectric constant.

Deposition and Electrical Characterization of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J-P. Maria ◽  
Wes Hackenberger ◽  
S. Trolier-McKinstry
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Piezoelectric Actuators ◽  
Laser Deposition ◽  
Processing Conditions ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACT(001)-oriented heterostructures consisting of LaAlCO3 substrates, SrRuO3 bottom electrodes, and Pb(Mg1/3Nb2/3) O3-PbTiO3 (PMN-PT) piezoelectric actuators were deposited by pulsed laser deposition (PLD). 4-circle x-ray diffraction analysis confirmed the epitaxial growth of each layer. In general, the electrical properties were found to be very sensitive to the processing conditions, in particular, the growth temperature. At growth temperatures below ∼620°C, the temperature dependence of the dielectric constant and the onset of a hysteritic polarization were found to be depressed by as much as 80 °C. When growth temperatures were increased above 660°C, electrical properties with temperature dependencies more consistent with those of single crystals were observed.

Electrical Characterization of BCB for Electrostatic Microelectromechanical Devices

2003 ◽  
Vol 782 ◽  
Author(s):  
Alireza Modafe ◽  
Nima Ghalichechian ◽  
Benjamin Kleber ◽  
Reza Ghodssi
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Energy Loss ◽  
Leakage Current ◽  
Moisture Absorption ◽  
Breakdown Strength ◽  
Electrical Characterization ◽  
Electrical Energy ◽  
Low K

ABSTRACTElectrical properties and thickness of insulating dielectric films directly affect electrical energy loss and electrical breakdown limit in electric micromachines. A thick, low-k film exhibits low parasitic capacitive effects that help with the reduction of electrical energy loss. The electrical performance can be deteriorated due to degradation of the electrical properties of the insulating dielectric material caused by process, device structure, and moisture. In this paper, we introduce the application of CYCLOTENE, a spin-on, low-k, BCB-based polymer in electric micromachines as insulating layer and interlevel dielectric. A novel approach using interdigitated capacitors for electrical characterization of CYCLOTENE and the effect of moisture absorption is introduced in this paper. The dielectric constant of CYCLOTENE is extracted from two steps of capacitance measurements, giving an average value of 2.49 with a standard deviation of 1.5 %. The dielectric constant increases by 1.2 % after a humidity stress of 85 %RH at 85 °C. The measured I-V characteristics of CYCLOTENE show a dependency of the breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225 V/μm for 2 μm finger spacing and 320 V/μm for 3 μm finger spacing, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrades drastically after a humidity stress of 85 %RH at 85 °C, showing a breakdown strength of 100 V/μm for 2 μm finger spacing and 180 V/μm for 3 μm finger spacing. Based on the results of this study, it is expected that the electrical efficiency of an electric micromachine is improved using BCB-based polymers with negligible dependency on moisture absorption. On the other hand, the maximum performance that depends on the maximum operating voltage is adversely affected by the degradation of the breakdown voltage after moisture absorption.

Spin-On Glass as low temperature gate insulator

2011 ◽  
Vol 1287 ◽  
Author(s):  
Miguel A. Domínguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Joel Molina ◽  
Mario Moreno ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Flexible Substrates ◽  
Electrical Characteristics ◽  
Thermally Grown

ABSTRACTIn this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

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