Spin-On Glass as low temperature gate insulator

2011 ◽  
Vol 1287 ◽  
Author(s):  
Miguel A. Domínguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Joel Molina ◽  
Mario Moreno ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Flexible Substrates ◽  
Electrical Characteristics ◽  
Thermally Grown

ABSTRACTIn this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

Effects of Curing Time on Properties of Spin-On Glass as Low-Temperature Insulator

2012 ◽  
Vol 1436 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Mario Moreno
Keyword(s):  
Surface Roughness ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Breakdown Field ◽  
Curing Time

ABSTRACTIn this work, we report the effects of curing time on properties of SiO2 films produced from Spin-On Glass (SOG) diluted with H2O and cured at 200°C. The electrical characterization showed that the insulator breakdown field for the films produced from SOG diluted with H2O with 1 Hr of curing time was approximately 5 MV/cm while for 6.5 Hrs of curing time the breakdown field was 21 MV/cm. Also, the refractive index and surface roughness were improved with longer curing time.

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO

2009 ◽  
Vol 615-617 ◽  
pp. 521-524 ◽  
Author(s):  
Michael Grieb ◽  
Masato Noborio ◽  
Dethard Peters ◽  
Anton J. Bauer ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Constant Current ◽  
Electrical Characteristics ◽  
Channel Mobility ◽  
Thermally Grown Oxides ◽  
Mos Devices ◽  
Mos Structures ◽  
Thermally Grown

In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by C-V, I-V measurements and by constant current stress. Compared to thermally grown oxides, the deposited oxides annealed in N2O or NO showed improved electrical properties. Dit-values lower than 1011cm-2eV-1 have been achieved for the NO sample. The intrinsic QBD-values of deposited and annealed oxides are one order of magnitudes higher than the highest values reported for thermally grown oxides. Also MOSFETS were fabricated with a channel mobility of 20.05 cm2/Vs for the NO annealed deposited oxide. Furthermore annealing in NO is preferred to annealing in N2O regarding µFE- and QBD-values.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

scholarly journals Photovoltaic effect in Light Emitting Diodes

2016 ◽  
Vol 1 (1) ◽  
pp. 30-36
Author(s):  
K. Remidi ◽  
A. Cheknane ◽  
M. Haddadi
Keyword(s):  
Theoretical Model ◽  
Experimental Work ◽  
Photovoltaic Effect ◽  
Research Work ◽  
Electrical Characterization ◽  
Experimental System ◽  
Photoelectric Effect ◽  
Electrical Characteristics ◽  
Light Emitting

This paper describes an experimental work on the electrical characterization of commercial LED of different colors and their photoelectric effect. A research work has been carried out to develop the experimental measurement in order to show the presence of a photovoltaic effect on LEDs. For this purpose, we measured the electrical characteristics of individual LED and studied their light intensities using a pyranometer EPLEY. This work focused mainly on red, green and yellowLEDs. Moreover, we have implemented an experimental system for the measurement of sensitivity of different LEDs depending on the power of light from a light source. A comparison was made between theoretical model and experimental results.

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